LESHAN RADIO COMPANY, LTD.
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching...
LESHAN RADIO COMPANY, LTD.
Schottky Barrier Diodes
These
Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
Extremely Fast Switching Speed Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc
Features
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
ORDERING INFORMATION
Device LBAT54ALT1 LBAT54ALT1G
Package SOT–23 SOT–23
Shipping 3000/Tape & Reel 3000/Tape & Reel
DEVICE MARKING
LBAT54ALT1 = B6
MAXIMUM RATINGS (T J = 125°C unless otherwise noted)
Rating
Reverse Voltage Forward Power Dissipation @ T A = 25°C Derate above 25°C Forward Current(DC) Junction Temperature Storage Temperature Range
Symbol VR PF
IF TJ T stg
Max Unit 30 Volts
225 1.8 200Max 125Max –55 to +150
mW mW/°C
mA °C °C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Reverse Breakdown Voltage (I R = 10 µA) Total Capacitance (V R = 1.0 V, f = 1.0 MHz) Reverse Leakage (V R = 25 V) Forward Voltage (I F = 0.1 mAdc) Forward Voltage (I F = 30 mAdc) Forward Voltage (I F = 100 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1) Forward Voltage (I F = 1.0 mAdc) Forward Voltage (I F = 10 mAdc) Forward Current (DC) Repetitive Peak Forward Current Non–Repetitive Peak Forward ...