LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
zFeatures Small surface mounting type SC-89 Low VF and low IR High re...
LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
zFeatures Small surface mounting type SC-89 Low VF and low IR High reliability zConstruction silicon epitaxial planar
LRB715WT1
3
1 SC-89
2
MAXIMUM RATINGS (TA = 25°C) Parameter
Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current* Junction temperature Storage temperature
∗ 60 Hz for 1
DEVICE MARKING LRB715WT1=3D
Symbol VRM VR IO IFSM Tj Tstg
Limits 40 40 30 200 125
-40~+125
Unit V V mA mA °C °C
1 ANODE
3 CATHODE
2 ANODE
ELECTRICAL CHARACTERISTICS(TA= 25°C)
Parameter
Symbol Min.
Forward voltage Reverse current
VF
IR -
Capacitance between terminals CT -
Typ Max. Unit - 0.37 V - 1 µA 2.0 - pF
Conditions
I =1mA
F
VR=10V VR=1V,f=1MHz
LRB715WT1-1/3
FORWARD CURRENT : IF(A)
LESHAN RADIO COMPANY, LTD. LRB715WT1
Electrical characteristic curves(TA = 25°C)
1 100m
10m 1m
Ta=125OC
Typ. pulse measurement
Ta=75OC
100µ 10µ
Ta=25OC Ta=-25OC
1µ 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
FORWARD VOLTAGE : VF(V) Fig. 1 Forward characteristics
REVERSE CURRENT : IR(A)
100µ 10µ 1µΑ
100n 10n
Ta=125°C Ta=75°C
Ta=25°C Ta=−25°C
1n 0 5 10 15 20 25 30 35
REVERSE VOLTAGE : VR(V) Fig. 2 Reverse characteristics
REVERSE RECOVERY TIME : trr(ns)
100
10
1
0 0 5 10 15 20 25 REVERSE VOLTAGE : VR (V)
Fig. 3 Capacitance between terminals characteristics
10 5
2 1
0.5
0.2
0.1
04
8 12 16 20 24 28
FORWARD CURRENT : IF (mA) Fig. 4 Reverse recovery time characteristics
CAPACITANCE BETWEEN TETRMINALS : Cr...