S-LBAT54HT1G

LESHAN RADIO COMPANY, LTD. Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Extremely Fast Switching Speed Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc Device Marking: JV We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device LBAT54HT13 G LBAT54HT33 G Marking JV JV Shipping 3000/Tape & Reel 10000/Tape & Reel LBAT54HT1G S- LBAT54HT1G 1 2 SOD-323 1 CATHODE 2 ANODE MAXIMUM RATINGS (TJ =125°C unless otherwise noted ) Rating Symbol Reverse Voltage VR Value 30 Unit V Total Device Dissipation FR-5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range PD RθJA TJ T stg 200 1.57 635 125Max –55 to +150 * FR-4 Minimum Pad ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Total Capacitance (V R = 1.0 V, f = 1.0 MHz) Reverse Leakage (V R = 25 V) Forward Voltage (I F = 0.1 mAdc) Forward Voltage (I F = 30 mAdc) Forward Voltage (I F = 100 mAdc) Reverse Recovery Time (I F = I R = 1...