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HBR3060ABR

Jilin Sino

SCHOTTKY BARRIER DIODE

R SCHOTTKY BARRIER DIODE HBR3060 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30(2×15) A 60 V 175 ℃ 0.68V ...


Jilin Sino

HBR3060ABR

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R SCHOTTKY BARRIER DIODE HBR3060 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30(2×15) A 60 V 175 ℃ 0.68V (@Tj=125℃) z z APPLICATIONS z High frequency switch power supply z Free wheeling diodes, polarity protection applications TO-22O z z, z z, z(RoHS) FEATURES zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction Temperature zGuard ring for overvoltage protection,High reliability zRoHS product TO-3PB TO-22OF TO-22OHF ORDER MESSAGE Order codes Marking Package HBR3060Z HBR3060 TO-220 HBR3060ZR HBR3060 TO-220 HBR3060F HBR3060 TO-220F HBR3060FR HBR3060 TO-220F HBR3060HF HBR3060 TO-220HF HBR3060HFR HBR3060 TO-220HF HBR3060AB HBR3060 TO-3PB HBR3060ABR HBR3060 TO-3PB Halogen Free NO YES NO YES NO YES NO YES Packaging Tube Tube Tube Tube Tube Tube Tube Tube Device Weight 1.98 g(typ) 1.98 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 5.20 g(typ) 5.20 g(typ) (Rev.):201003E 1/8 R ABSOLUTE RATINGS (Tc=25℃) Parameter Repetitive peak reverse voltage Symbol VRRM Maximum DC blocking voltage VDC Average forward current TC=150℃ (TO-220, TO-3PB) TC=125℃ (TO-220F, TO-220HF) per device per diode IF(AV) Surge non repetitive forward current ( 8.3ms — JEDEC ) 8.3 ms single half-sine-wave (JEDEC Method) IFSM Maximum junction temperature Tj Storage temperature range TSTG HBR3060 Value 60 Unit V 60 V 30 A 15 275 A 175 -40~+150 ℃ ℃ ELECTRICAL CHARACT...




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