R SCHOTTKY BARRIER DIODE
HBR3060
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
30(2×15) A 60 V 175 ℃
0.68V ...
R
SCHOTTKY BARRIER DIODE
HBR3060
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
30(2×15) A 60 V 175 ℃
0.68V (@Tj=125℃)
z z
APPLICATIONS
z High frequency switch power supply
z Free wheeling diodes, polarity protection applications
TO-22O
z z, z z, z(RoHS)
FEATURES
zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction
Temperature zGuard ring for overvoltage
protection,High reliability zRoHS product
TO-3PB
TO-22OF TO-22OHF
ORDER MESSAGE
Order codes
Marking Package
HBR3060Z
HBR3060 TO-220
HBR3060ZR
HBR3060 TO-220
HBR3060F
HBR3060 TO-220F
HBR3060FR
HBR3060 TO-220F
HBR3060HF
HBR3060 TO-220HF
HBR3060HFR HBR3060 TO-220HF
HBR3060AB
HBR3060 TO-3PB
HBR3060ABR HBR3060 TO-3PB
Halogen Free NO YES NO YES NO YES NO YES
Packaging Tube Tube Tube Tube Tube Tube Tube Tube
Device Weight 1.98 g(typ) 1.98 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 5.20 g(typ) 5.20 g(typ)
(Rev.):201003E
1/8
R
ABSOLUTE RATINGS (Tc=25℃)
Parameter Repetitive peak reverse voltage
Symbol VRRM
Maximum DC blocking voltage
VDC
Average forward current
TC=150℃ (TO-220, TO-3PB) TC=125℃ (TO-220F, TO-220HF)
per device
per diode
IF(AV)
Surge non repetitive forward current ( 8.3ms — JEDEC ) 8.3 ms single half-sine-wave (JEDEC Method)
IFSM
Maximum junction temperature
Tj
Storage temperature range
TSTG
HBR3060
Value
60
Unit
V
60 V
30 A
15
275 A
175 -40~+150
℃ ℃
ELECTRICAL CHARACT...