Document
LESHAN RADIO COMPANY, LTD.
Schottky barrier diode
LRB751G-40T1G
zApplications General rectification
zFeatures 1) Small power mold type.
(SO D-723) 2) Low VF 3) High reliability 4) Pb-Free package is available 5) S- Prefix for Automotive and O ther Applications Req uiring
Uniq ue Site and Control Change Req uirements; AE C -Q 101 Q ualified and PPAP Capable.
zConstruction Silicon epitaxial planar
LRB751G-40T1G S-LRB751G-40T1G
1
2
SOD-723
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature
Symbol VRM VR Io IFSM Tj
Tstg
Limits 40 30 30 200 125
-40 to +125
Unit V V mA mA ℃ ℃
zElectrical characteristic (Ta=25°C)
Parameter Forward voltage Reverse current Capacitance between terminals
Symbol Min. Typ. Max. VF - - 0.37 IR - - 0.5 Ct - 2 -
Unit Conditions V IF=1mA µA VR=30V pF VR=1V , f=1MHz
zDEVICE MARKING AND ORDERING INFORMATION
Device
LRB751G-40T1G S-LRB751G-40T1G
Marking 5
Shipping 4000/Tape&Reel
Rev.O 1/4
FORWARD CURRENT:IF(mA)
FORWARD VOLTAGE:VF(mV)
LESHAN RADIO COMPANY, LTD.
LRB751G-40T1G , S-LRB751G-40T1G
Electricalcharacteristiccurves(Ta=25OC)
100
10 Ta=75℃ Ta=125℃
1
0.1
Ta=25℃ Ta=-25℃
0.01
0.001 0
100 200 300 400 500 600 700 800
FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
0REVERSE CURRENT:IR(nA)
100000
Ta=125℃
10000 1000 100 10
Ta=75℃ Ta=25℃ Ta=-25℃
1 0 5 10 15 20 25 30 35 40
REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
10 f=1MHz
1
0.1 0
5 10 15 20 25
REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
30
330 1000
320
Ta=25℃ IF=1mA n=30pcs
900 800
Ta=25℃ VR=30V n=30pcs
700
REVERSE CURRENT:IR(nA)
310 600 500
300
290 AVE:304.2mV
400 300
AVE:111.0nA 200 100
280 0
VF DISPERSION MAP
IR DISPERSION MAP
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
10 9 Ta=25℃ f=1MHz 8 VR=0V 7 n=10pcs 6 5 4 3 AVE:1.81pF 2 1 0
Ct DISPERSION MAP
PEAK SURGE FORWARD CURRENT:IFSM(A)
RESERVE RECOVERY TIME:trr(ns)
20 30
Ifsm 1cyc
25
15
8.3ms
20
Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs
10 8 6
Ifsm
8.3ms 8.3ms 1cyc
10
AVE:3.40A 5
15 10
5 AVE:11.7ns
4 2
0 IFSM DISRESION MAP
0 trr DISPERSION MAP
0
1 10 100 NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE FORWARD CURRENT:IFSM(A)
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
LRB751G-40T1G , S-LRB751G-40T1G
Electricalcharacteristiccurves(Ta=25OC)
10
8
Ifsm t
6
4
2
0
0.1 1 TIME:t(ms) 10 IFSM-t CHARACTERISTICS
100
TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
1000
Rth(j-a)
Rth(j-c)
100
Mounted on epoxy board
IM=1mA
IF=10mA
10 0.001
1ms time 300us
0.1 TIME:t(s) 10 Rth-t CHARACTERISTICS
1000
PEAK SURGE FORWARD CURRENT:IFSM(A)
FORWARD POWER DISSIPATION:Pf(W)
0.05
0.04
0.03 D=1/2 Sin(θ=180)
0.02
DC
0.01
0
0 0.01 0.02 0.03 0.04 0.05
AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS
0.1 0.08 0.06 DC 0.04 D=1/2
0A Io
0V t
VR D=t/T
VR=20V
T Tj=125℃
0.02 Sin(θ=180)
0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta)
REVERSE POWER DISSIPATION:PR (W)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.003
0.002 0.001
D=1/2 DC
Sin(θ=180)
0 0 10 20 30
REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
40
0.1 0.08 0.06 DC
0A Io
0V t
VR D=t/T
VR=20V
T Tj=125℃
0.04 D=1/2
0.02 Sin(θ=180)
0 0 25 50 75 100
CASE TEMPARATURE:Tc(℃) Derating Curve゙(Io-Tc)
125
Rev.O 3/4
AVERAGE RECTIFI FORWARD CURRENT:Io(A)
LESHAN RADIO COMPANY, LTD.
LRB751G-40T1G , S-LRB751G-40T1G
SOD−723
D −X− −Y−
E
b 2X 0.08 (0.0032) X Y
A
cL HE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
MILLIMETERS
INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.49 0.52 0.55 0.019 0.020 0.022
b 0.25 0.28 0.32 0.0098 0.011 0.013
c 0.08 0.12 0.15 0.0032 0.0047 0.0059
D 0.95 1.00 1.05 0.037 0.039 0.041
E 0.55 0.60 0.65 0.022 0.024 0.026 HE 1.35 1.40 1.45 0.053 0.055 0.057
L 0.15 0.20 0.25 0.006 0.0079 0.010
SOLDERING FOOTPRINT*
1.1 0.043
0.45 0.0177
0.50 0.0197
ǒ ǓSCALE 10:1
mm inches
Rev.O 4/4
.