LRB520S-40T1G

LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE zApplictions Low current rectification and high speed switching zFeatures Extremelysmall surface mounting type. (SOD523) High reliability Low IR . zConstruction Silicon epitaxial planar z We declare that the material of product compliance with RoHS requirements. Ordering Information Device LRB520S-40T1G Marking D Shipping 3000/Tape&Reel LRB520S-40T3G D 10000/Tape&Reel LRB520S-40T1G 1 2 SOD-523 1 Cathode 2 Anode MAXIMUM RATINGS (TA = 25°C) Parameter Reverse voltage(repetitive peak) DC reverse voltage Average rectified forward current Peak forward surge current Junction temperature Storage temperature Symbol VR VR IO IFSM Tj Tstg Limits 40 40 200 1 125 -40~+125 Unit V V mA A °C °C ELECTRICAL CHARACTERISTICS(TA= 25°C) Parameter Symbol Forward voltage Forward voltage VF VF Reverse current Reverse current IR IR Min. - - Max. 0.39 0.55 1 10 Unit V V µΑ µΑ Conditions I F=10mA I F=100mA VR=10V VR=40V Rev.O 1/4 zElectrical characteristic curves LESHAN RADIO COMPANY, LTD. LRB520S-40T1G FORWARD CURRENT:IF(mA) FORWARD VOLTAGE:VF(mV) 1000 100 10 1 0.1 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 0.01 0.001 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 REVERSE CURRENT:IR(μA) 1000 100 10 1 0.1 0.01 0.001 0.0001 0 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 10 20 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 40 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 f=1MHｚ 10 1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-C...