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SBL3040SABR

Jilin Sino

SCHOTTKY BARRIER DIODE

R SCHOTTKY BARRIER DIODE SBL3040S MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30(2×15)A 40 V 150 ℃ 0.55V ...



SBL3040SABR

Jilin Sino


Octopart Stock #: O-930071

Findchips Stock #: 930071-F

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R SCHOTTKY BARRIER DIODE SBL3040S MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30(2×15)A 40 V 150 ℃ 0.55V (@Tj=125℃) z z APPLICATIONS z High frequency switch power supply z Free wheeling diodes, polarity protection applications TO-22O z z, z z, z(RoHS) FEATURES zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction Temperature zGuard ring for overvoltage protection,High reliability zRoHS product TO-3PB TO-22OHF ORDER MESSAGE Order codes Marking Package SBL3040SZ SBL3040S TO-220 SBL3040SZR SBL3040S TO-220 SBL3040SHF SBL3040S TO-220HF SBL3040SHF SBL3040S TO-220HF SBL3040SAB SBL3040S TO-3PB SBL3040SABR SBL3040S TO-3PB Halogen Free NO YES NO YES NO YES Packaging Tube Tube Tube Tube Tube Tube Device Weight 1.98 g(typ) 1.98 g(typ) 1.70 g(typ) 1.70 g(typ) 5.20 g(typ) 5.20 g(typ) (Rev.):201003H 1/7 R ABSOLUTE RATINGS (Tc=25℃) Parameter Repetitive peak reverse voltage Symbol VRRM Maximum DC blocking voltage VDC Average forward current TC=100℃ (TO-220, TO-3PB) TC=100℃ (TO-220HF) per device per diode IF(AV) Surge non repetitive forward current ( 8.3ms — JEDEC ) 8.3 ms single half-sine-wave (JEDEC Method) IFSM Maximum junction temperature Tj Storage temperature range TSTG SBL3040S Value 40 Unit V 40 V 30 A 15 275 A 150 -40~+150 ℃ ℃ ELECTRICAL CHARACTERISTICS Parameter IR Tests conditions Tj =25℃ Tj =125℃ VR=VRRM Value(min) Value(typ) Value(...




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