HBR10200C

R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATIONS z High frequency switch power supply z Free wheeling diodes, polarity protection applications TO-22OC z z， z z， z（RoHS） FEATURES zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction Temperature zGuard ring for overvoltage protection，High reliability zRoHS product TO-22OHF TO-22OF ORDER MESSAGE Order codes Marking Package HBR10200C HBR10200 TO-220C HBR10200CR HBR10200 TO-220C HBR10200F HBR10200 TO-220F HBR10200FR HBR10200 TO-220F HBR10200HF HBR10200 TO-220HF HBR10200HFR HBR10200 TO-220HF Halogen Free NO YES NO YES NO YES Packaging Tube Tube Tube Tube Tube Tube Device Weight 2.15 g(typ) 2.15 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) (Rev.)：201003H 1/7 R ABSOLUTE RATINGS (Tc=25℃) Parameter Repetitive peak reverse voltage Symbol VRRM Maximum DC blocking voltage VDC Average forward current TC=150℃ (TO-220C) TC=125℃ (TO-220F, TO-220HF) per device per diode IF(AV) Surge non repetitive forward current （ 8.3ms — JEDEC ） 8.3 ms single half-sine-wave (JEDEC Method) IFSM Maximum junction temperature Tj Storage temperature range TSTG HBR10200 Value 200 Unit V 200 V 10 A 5 80 A 175 -40~+150 ℃ ℃ ELECTRICAL CHARACTERISTICS Parameter IR Tests conditions Tj =25℃ Tj =125℃ VR=VRRM Value(min) Value(t...