DatasheetsPDF.com

BL8596 Dataheets PDF



Part Number BL8596
Manufacturers BELLING
Logo BELLING
Description LDO mode OVP
Datasheet BL8596 DatasheetBL8596 Datasheet (PDF)

BL8596 LDO mode OVP with Integrated P-MOSFET DESCRIPTION The BL8596 is Li+ charger IC with integrated PMOSFET. The device is fabricated with advanced CMOS technology to achieve maintaining low static power dissipation over a very broad VCC operating range. The BL8596 integrates a P-MOSFET and Schottky diode which is normally a discrete device employed for conventional battery charging design of mobile phone system. In addition to that, BL8596 works like a LDO mode to keep CHRIN voltage stable .

  BL8596   BL8596



Document
BL8596 LDO mode OVP with Integrated P-MOSFET DESCRIPTION The BL8596 is Li+ charger IC with integrated PMOSFET. The device is fabricated with advanced CMOS technology to achieve maintaining low static power dissipation over a very broad VCC operating range. The BL8596 integrates a P-MOSFET and Schottky diode which is normally a discrete device employed for conventional battery charging design of mobile phone system. In addition to that, BL8596 works like a LDO mode to keep CHRIN voltage stable when ACIN goes high. And thus it will not trigger the CHRIN pin over-voltage protection when ACIN voltage increased to as high as 15V. FEATURES  A Built-In P-MOSFET  LDO mode makes CHRIN voltage stable around 5.5V  Range of operation input voltage: Max 15V  Charging current up to 1A  Environment Temperature: -20C~85C APPLICATIONS  Cell phone and other portable device APPLICATION CIRCUIT The BL8596 provides complete Li+ charger protections and saves the external MOSFET and Schottky diode for the charger of cell phone’s PMIC. It is available in a DFN2x2-8L package. BL8596 The above features and small package make the BL8596 an ideal part for cell phones applications. ORDERING INFORMATION / PIN CONFIGURATION / MARKING BL8596CKBTR DFN2x2-8L BL8596CB6TR SOT23-6L Top Marking OBYW YW means the year and week parts being manufactured, subjected to change. OB is the code of the product; it will not be changed on any part. www.belling.com.cn 1 BL8596 ABSOLUTE MAXIMUM RATING (Note1) Parameter Symbol Rate Unit ACIN Input Voltage (ACIN to GND) VACIN -0.3~15 V CHRIN to GND Voltage VCHRIN -0.3~6 V GATDRV to GND Voltage VGATDRV -0.3~ VCHRIN V OUT to GND Voltage VOUT -0.3~6 V Output power limit, Iout x (VACIN-VOUT) Maximum Junction Temperature PD 0.75 TJ 150 W Storage Temperature TSTG -40 to 150 C Maximum Lead Soldering Temperature, 10 Seconds TSDR 260 Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Exposure to absolute maximum rating conditions for extended periods may destroy the device. THERMAL RESISTANCE RATING Parameter Device Symbol Typical Unit Junction-to-Ambient Resistance in Free Air(Note2) DFN2x2-8 SOT23-6 JA JA 80 C /W 235 C /W Note 2: JA is measured with the component mounted on a high effective thermal conductivity test board in free air. The exposed pad of DFN2x2-8 is soldered directly on the PCB. THERMAL CONSIDERATION Even though BL8596 can handle charge current larger than 1A, it is also limited by the power dissipation of the package DFN2x2-8L. The DFN2x2 package has a thermal pad exposed, and it should be tightly soldered to bottom PCB with a large coil area to dissipate the heat. In general, to have the BL8596 to work under a safe condition, one should take DFN2x2 power limit as 0.75W, and if the dropout voltage is 1.5V, one is suggested to set the charging current to be less than 500mA. RECOMMENDED OPERATION CONDITIONS Symbol VA.


BL8595 BL8596 BL8598


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)