DatasheetsPDF.com

SVF9N65F Dataheets PDF



Part Number SVF9N65F
Manufacturers Silan Microelectronics
Logo Silan Microelectronics
Description 650V N-CHANNEL MOSFET
Datasheet SVF9N65F DatasheetSVF9N65F Datasheet (PDF)

SVF9N65F_Datasheet 9A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF9N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-D.

  SVF9N65F   SVF9N65F


Document
SVF9N65F_Datasheet 9A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF9N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 9A, 650V, RDS(on)(typ)=0.98Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF9N65F Package TO-220F-3L Marking SVF9N65F Material Pb free packing Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.1 2012.06.15 Page 1 of 7 SVF9N65F_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS Tstg IDM Rating 650 ±30 9.0 5.69 36.0 49 0.39 532 -55~+150 -55~+150 Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Rating 2.55 120 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) Test conditions VGS=0V, ID=250µA VDS=650V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA Min. 650 --2.0 RDS(on) VGS=10V, ID=4.5A -- Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDS=25V, VGS=0V, f=1.0MHz VDD=325V, RG=10Ω, ID=9.0A (Note2, 3) VDS=520V, ID=9.0A, VGS=10V (Note2, 3) ----------- Typ. ----- Max. -1.0 ±100 4.0 Unit V µA nA V 0.98 1.2 Ω 928.0 109.3 4.6 12.8 25.7 31.1 23.9 20.71 5.69 8.47 ----------- pF ns nC HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.1 2012.06.15 Page 2 of 7 SVF9N65F_Datasheet SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Continuous Source Current Pulsed Source Current IS Integral Reverse P-N Junction Diode in the ISM MOSFET Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VSD IS=9.0A,VGS=0V Trr IS=9.0A,VGS=0V, Qrr dIF/dt=100A/µS Notes: 1. L=30mH, IAS=5.78A, VDD=50V, RG=25Ω, starting TJ=25°C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature. Min. -- -- ---- Typ. -- -- -574.2 4.36 Max. 9.0 36.0 1.4 --- Unit A V ns µC TYPICAL CHARACTERISTICS HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.1 2012.06.15 Page 3 of 7 TYPICAL CHARACTERISTICS(continued) 2500 2000 Figure 5. Capacitance Characteristics Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd Capasistance(pF) 1500 1000 500 Ciss Coss Crss Notes: 1. VGS=0V 2. f=1MHz 0 0.1 1 10 100 Drain-Source Voltage – VDS(V) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Drain-Source Breakdown Voltage(Normalized) – BVDSS(V) 1.1 1.0 0.9 0.8 -100 Notes: 1. VGS=0V 2. ID=250µA -50 0 50 100 150 200 Junction Temperature – TJ(°C) Figure 9. Max. Safe Operating Area 102 Operation in This Area is Limited by RDS(ON) 100µs 101 1ms 10ms 100 DC Drain Current - ID(A) 10-1 10-2 100 Notes: 1.TC=25°C 2.Tj=150°C 3.Single Pulse 101 102 Drain Source Voltage - VDS(V) 103 Drain-Source On-Resistance (Normalized) – RDS(ON)(Ω) Drain Current - ID(A) Gate-Source Voltage– VGS(V) SVF9N65F_Datasheet Figure 6. Gate Charge Characteristics 12 VDS=520V 10 VDS=325V VDS=130V 8 6 4 2 Note: ID=9.0A 0 0 5 10 15 20 25 Total Gate Charge – Qg(nC) Figure 8. On-resistance Variation 3.0 vs. Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -100 Notes: 1. VGS=10V 2. ID=4.5A -50 0 50 100 150 200 Junction Temperature – TJ(°C) Figure 10. Maximum Drain Current vs. Case Temperature 10 8 6 4 2 0 25 50 75 100 125 150 Case Temperature – TC(°C) HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.1 2012.06.15 Page 4 of 7 SVF9N65F_Datasheet TYPICAL TEST CIRCUIT Gate Charge Test Circuit & Waveform Same Type VGS 50KΩ as DUT 10V VDS 12V 200nF 300nF Qg Qgs Qgd VGS DUT 3mA Charge 10V VDS VGS RG Resistive Switching Test Circuit & Waveform RL DUT VDD VDS 90% 10% VGS td(on) tr ton td(off) tf toff RG 10V tp Unclamped Inductive Switching Test Circuit & Waveform VDS ID.


AT070TN01 SVF9N65F LCD-024N002A


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)