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SVF9N65F_Datasheet
9A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF9N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES
∗ 9A, 650V, RDS(on)(typ)=0.98Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVF9N65F
Package TO-220F-3L
Marking SVF9N65F
Material Pb free
packing Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2012.06.15 Page 1 of 7
SVF9N65F_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current Pulsed
TC=25°C TC=100°C
Power Dissipation(TC=25°C) -Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol VDS VGS
ID
IDM
PD
EAS Tstg IDM
Rating 650 ±30 9.0 5.69 36.0 49 0.39 532
-55~+150 -55~+150
Unit V V
A
A W W/°C mJ °C °C
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Rating 2.55 120
Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Symbol BVDSS IDSS IGSS VGS(th)
Test conditions VGS=0V, ID=250µA VDS=650V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA
Min. 650 --2.0
RDS(on) VGS=10V, ID=4.5A
--
Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd
VDS=25V, VGS=0V, f=1.0MHz
VDD=325V, RG=10Ω, ID=9.0A
(Note2, 3) VDS=520V, ID=9.0A, VGS=10V
(Note2, 3)
-----------
Typ. -----
Max. -1.0
±100 4.0
Unit V µA nA V
0.98 1.2
Ω
928.0 109.3
4.6 12.8 25.7 31.1 23.9 20.71 5.69 8.47
-----------
pF ns nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2012.06.15 Page 2 of 7
SVF9N65F_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current Pulsed Source Current
IS Integral Reverse P-N Junction Diode in the
ISM MOSFET
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
VSD IS=9.0A,VGS=0V Trr IS=9.0A,VGS=0V, Qrr dIF/dt=100A/µS
Notes: 1. L=30mH, IAS=5.78A, VDD=50V, RG=25Ω, starting TJ=25°C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.
Min. --
--
----
Typ. --
--
-574.2 4.36
Max. 9.0
36.0
1.4 ---
Unit
A
V ns µC
TYPICAL CHARACTERISTICS
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2012.06.15 Page 3 of 7
TYPICAL CHARACTERISTICS(continued)
2500 2000
Figure 5. Capacitance Characteristics
Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd
Capasistance(pF)
1500 1000
500
Ciss Coss Crss
Notes:
1. VGS=0V 2. f=1MHz
0 0.1 1 10 100
Drain-Source Voltage – VDS(V)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Drain-Source Breakdown Voltage(Normalized) – BVDSS(V)
1.1 1.0
0.9 0.8
-100
Notes: 1. VGS=0V 2. ID=250µA
-50 0 50 100 150 200
Junction Temperature – TJ(°C)
Figure 9. Max. Safe Operating Area
102 Operation in This Area is Limited by RDS(ON) 100µs
101 1ms
10ms
100 DC
Drain Current - ID(A)
10-1 10-2
100
Notes: 1.TC=25°C 2.Tj=150°C 3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
Drain-Source On-Resistance (Normalized) – RDS(ON)(Ω)
Drain Current - ID(A)
Gate-Source Voltage– VGS(V)
SVF9N65F_Datasheet
Figure 6. Gate Charge Characteristics 12
VDS=520V 10 VDS=325V
VDS=130V 8
6
4
2 Note: ID=9.0A
0 0 5 10 15 20 25
Total Gate Charge – Qg(nC)
Figure 8. On-resistance Variation 3.0 vs. Temperature
2.5
2.0
1.5
1.0
0.5 0.0
-100
Notes: 1. VGS=10V 2. ID=4.5A
-50 0 50 100 150 200
Junction Temperature – TJ(°C)
Figure 10. Maximum Drain Current vs. Case Temperature
10
8
6
4
2
0 25 50 75 100 125 150
Case Temperature – TC(°C)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2012.06.15 Page 4 of 7
SVF9N65F_Datasheet
TYPICAL TEST CIRCUIT
Gate Charge Test Circuit & Waveform
Same Type
VGS
50KΩ
as DUT
10V VDS
12V 200nF
300nF
Qg
Qgs Qgd
VGS
DUT
3mA
Charge
10V
VDS VGS
RG
Resistive Switching Test Circuit & Waveform
RL
DUT
VDD
VDS
90%
10%
VGS
td(on)
tr
ton
td(off)
tf
toff
RG 10V
tp
Unclamped Inductive Switching Test Circuit & Waveform
VDS ID.