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TPCT4203 Dataheets PDF



Part Number TPCT4203
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet TPCT4203 DatasheetTPCT4203 Datasheet (PDF)

TPCT4203 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCT4203 Lithium-Ion Battery Applications (1Cell) z Lead(Pb)-Free z Small footprint due to a small and thin package z Low source-source ON-resistance: RSS (ON) = 25.5 mΩ (typ.) z High forward transfer admittance: |Yfs| = 18 S (typ.) z Low leakage current: ISSS = 10 μA (max) (VSS = 20 V) z Enhancement mode: Vth = 0.5 to 1.2 V (VSS = 10 V, IS = 200 μA) z Common drain Absolute Maximum Ratings (Ta = 25°C) Characteristic.

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TPCT4203 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCT4203 Lithium-Ion Battery Applications (1Cell) z Lead(Pb)-Free z Small footprint due to a small and thin package z Low source-source ON-resistance: RSS (ON) = 25.5 mΩ (typ.) z High forward transfer admittance: |Yfs| = 18 S (typ.) z Low leakage current: ISSS = 10 μA (max) (VSS = 20 V) z Enhancement mode: Vth = 0.5 to 1.2 V (VSS = 10 V, IS = 200 μA) z Common drain Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Source-source voltage VSSS 20 V Gate-source voltage VGSS ±12 V DC Source current Pulse (Note 1) (Note 1) IS ISP 6 A 24 Power dissipation (t = 10 s) (Note 2a, 3) PD 1.47 W Power dissipation (t = 10 s) (Note 2b, 3) PD 0.47 W Single-pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy (Note 2a, 5) Channel temperature Storage temperature range EAS IAR EAR Tch Tstg 46.8 6 0.058 150 −55 to 150 mJ A mJ °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm 3.8±0.1 1.6 ± 0.1 0.375 0.375 1 2 B 0.14±0.04 4 3 0.025 M B 0.6 ± 0.05 S 0.05 S 2 0.3±0.1 0.4+0.1 -0.06 1 1.25±0.1 3 0.35+0.06 -0.1 4 1.93±0.1 0.2±0.05 1.GATE 1 2.GATE 2 JEDEC 3.SOURCE 2 4.SOURCE 1 ― JEITA ― TOSHIBA 2-2V1A Weight: 9.7 mg (typ.) Circuit Configuration FET1 1 4 23 FET2 1 2008-12-27 TPCT4203 WARNING 【Handling Precaution for Power MOSFET in use of Protection Circuit for Battery Pack】 Flame-retardant resins of UL94-V0 flammability class are used in packages, however, they are not noncombustible. Use a unit, for example PTC Thermistor, which can shut off the power supply if a short-circuit occurs. If the power supply is not shut off on the occurring short-circuit, a large short-circuit current will flow continuously, which may cause the device to catch fire or smoke. The product listed in this document is intended for usage in Lithium Ion Battery charge and discharge control application. So it is responsible for customer when using the product in the different application. Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a, 3) Rth (ch-a) 85 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b, 3) Rth (ch-a) 266 °C/W This transistor is an electrostatic-sensitive device. Handle with care. Marking (Note 6) Lot code (month) Lot No. Pin #1 Part No. (or abbreviation code) 203 Pr.


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