4 Megabit (512K x 8-bit) Flash Memory
EN29F040A 4 Megabit (512K x 8-bit) Flash Memory
EN29F040A
FEATURES
• 5.0V operation for read/write/erase operations
• ...
Description
EN29F040A 4 Megabit (512K x 8-bit) Flash Memory
EN29F040A
FEATURES
5.0V operation for read/write/erase operations
Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns
Sector Architecture: - 8 uniform sectors of 64Kbytes each - Supports full chip erase - Individual sector erase supported - Sector protection:
Hardware locking of sectors to prevent program or erase operations within individual sectors
High performance program/erase speed - Byte program time: 10µs typical - Sector erase time: 500ms typical - Chip erase time: 3.5s typical
Low Standby Current - 1µA CMOS standby current-typical - 1mA TTL standby current
Low Power Active Current - 30mA active read current - 30mA program/erase current
JEDEC Standard program and erase commands
JEDEC standard DATA polling and toggle bits feature
Single Sector and Chip Erase
Sector Unprotect Mode
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode
0.23 µm triple-metal double-poly triple-well CMOS Flash Technology
Low Vcc write inhibit < 3.2V
100K endurance cycle
Package Options
- 32-pin PDIP
- 32-pin PLCC
- 32-pin TSOP (Type 1)
Commercial and Industrial Temperature Ranges
GENERAL DESCRIPTION
The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typi...
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