OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching • Optimized technology for DC/DC converters ...
OptiMOS(TM)3 Power-
Transistor
Features Ideal for high frequency switching Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21
Type
IPD135N08N3 G
IPD135N08N3 G
Product Summary VDS RDS(on),max ID
80 V 13.5 mW 45 A
Package Marking
PG-TO-252-3 135N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse3)
E AS
I D=45 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information
Rev. 2.2
page 1
Value
Unit
45
A
39
180
50
mJ
±20
V
79
W
-55 ... 175
°C
55/175/56
2014-05-19
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case Thermal resistance, junction - ambient
R thJC R thJA
minimal footprint 6 cm2 cooling area4)
IPD135N08N3 G
min.
Values typ.
Unit max.
-
-
1.9 K/W
-
-
62
-
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (B...