IPF135N03LG

Type OptiMOS®3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Avalanche rated Pb-free plating; RoHS compliant IPD135N03L G IPS135N03L G IPF135N03L G IPU135N03L G Product Summary V DS R DS(on),max ID 30 V 13.5 mΩ 30 A Type IPD135N03L G IPF135N03L G IPS135N03L G IPU135N03L G Package Marking PG-TO252-3-11 135N03L PG-TO252-3-23 135N03L PG-TO251-3-11 135N03L PG-TO251-3-21 135N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage 1) J-STD20 and JESD22 Rev. 1.0 ID I D,pulse I AS E AS dv /dt V GS V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C T C=25 °C T C=25 °C I D=10 A, R GS=25 Ω I D=30 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C page 1 Value 30 26 30 21 210 30 20 6 ±20 Unit A mJ kV/µs V 2006-10-23 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg IEC climatic category; DIN IEC 68-1 IPD135N03L G IPS135N03L G IPF135N03L G IPU135N03L G Value 31 -55 ... 175 55/175/56 Unit W °C Parameter ...