Type
OptiMOS®3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • ...
Type
OptiMOS®3 Power-
Transistor
Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Avalanche rated Pb-free plating; RoHS compliant
IPD135N03L G IPS135N03L G
IPF135N03L G IPU135N03L G
Product Summary V DS R DS(on),max ID
30 V 13.5 mΩ 30 A
Type
IPD135N03L G
IPF135N03L G
IPS135N03L G
IPU135N03L G
Package Marking
PG-TO252-3-11 135N03L
PG-TO252-3-23 135N03L
PG-TO251-3-11 135N03L
PG-TO251-3-21 135N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage 1) J-STD20 and JESD22 Rev. 1.0
ID
I D,pulse I AS E AS dv /dt V GS
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V, T C=100 °C
T C=25 °C
T C=25 °C
I D=10 A, R GS=25 Ω
I D=30 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C
page 1
Value 30 26 30
21
210 30 20
6
±20
Unit A
mJ kV/µs V
2006-10-23
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation Operating and storage temperature
P tot T C=25 °C T j, T stg
IEC climatic category; DIN IEC 68-1
IPD135N03L G IPS135N03L G
IPF135N03L G IPU135N03L G
Value 31
-55 ... 175 55/175/56
Unit W °C
Parameter
...