Document
AOV20S60
600V 18A α MOS TM Power Transistor
General Description
Product Summary
The AOV20S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V
100% UIS Tested 100% Rg Tested
700V 80A 0.25Ω 20nC 4.9µJ
Top View
DFN8X8
Bottom View
D
G
Pin1:G AOV20S60
S S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
IDSM
IAR EAR EAS
TC=25°C Power Dissipation B Derate above 25oC
PD
TA=25°C Power Dissipation A TA=70°C
MOSFET dv/dt ruggedness Peak diode recovery dv/dt H
PDSM dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
t ≤ 10s Steady-State
TL
Symbol RθJA
Maximum Junction-to-Case
Steady-State
RθJC
Pin2: Driver Source
Maximum 600 ±30 18 13 80 3.6 2.9 3.4 23 188 278 2.2 8.3 5.3 100 20
-55 to 150
Typ 12 40 0.35
300
G
Max 15 50 0.45
D
S
Units V V
A
A A mJ mJ W W/ oC W V/ns °C
°C Units °C/W °C/W °C/W
Rev.1.0: September 2013
www.aosmd.com
Page 1 of 7
AOV20S60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V VDS=480V, TJ=150°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V,ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=10A, TJ=25°C VGS=10V, ID=10A, TJ=150°C
VSD Diode Forward Voltage
IS=10A,VGS=0V, TJ=25°C
IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed CurrentC
DYNAMIC PARAMETERS
Ciss Input Capacitance Coss Output Capacitance
VGS=0V, VDS=100V, f=1MHz
600 -
-
650 700
-
V
- -1 µA
- 10 -
- - ±100 nΑ
2.8 3.4 4.1
V
- 0.21 0.25 Ω
- 0.53 0.66 Ω
- 0.84 -
V
- - 18 A
- - 80 A
- 1038 - 68 -
pF pF
Co(er) Co(tr)
Effective output capacitance, energy related H
Effective output capacitance, time related I
VGS=0V, VDS=0 to 480V, f=1MHz
Crss Reverse Transfer Capacitance
VGS=0V, VDS=100V, f=1MHz
Rg Gate resistance
f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=10A
Qgd Gate Drain Charge
tD(on) tr tD(off)
Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime
VGS=10V, VDS=400V, ID=10.