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AOV11S60 Dataheets PDF



Part Number AOV11S60
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description Power Transistor
Datasheet AOV11S60 DatasheetAOV11S60 Datasheet (PDF)

AOV11S60 600V 8A α MOS TM Power Transistor General Description Product Summary The AOV11S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg T.

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AOV11S60 600V 8A α MOS TM Power Transistor General Description Product Summary The AOV11S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 45A 0.5Ω 11nC 2.7µJ Top View DFN8X8 Bottom View D G Pin1:G AOV11S60 S S Pin2: Driver Source Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G TC=25°C Power Dissipation B Derate above 25oC VGS ID IDM IDSM IAR EAR EAS PD TA=25°C Power Dissipation A TA=70°C MOSFET dv/dt ruggedness Peak diode recovery dv/dt H PDSM dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics TL Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State Symbol RθJA Maximum Junction-to-Case Steady-State RθJC Maximum 600 ±30 8 7.0 45 0.65 0.22 2 60 120 156 1.25 8.3 5.3 100 20 -55 to 150 300 Typ 12 40 0.6 G Max 15 50 0.8 D S Units V V A A A mJ mJ W W/ oC W V/ns °C °C Units °C/W °C/W °C/W Rev.1.0: September 2013 www.aosmd.com Page 1 of 7 AOV11S60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=150°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.8A, TJ=25°C VGS=10V, ID=3.8A, TJ=150°C VSD Diode Forward Voltage IS=5.5A,VGS=0V, TJ=25°C IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed CurrentC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=100V, f=1MHz 600 - - 650 700 - V - -1 µA - 10 - - - ±100 nΑ 2.8 3.5 4.1 V - 0.42 0.5 Ω - 1.17 1.4 Ω - 0.84 - V - - 8A - - 45 A - 545 - 37.3 - pF pF Co(er) Co(tr) Effective output capacitance, energy related H Effective output capacitance, time related I VGS=0V, VDS=0 to 480V, f=1MHz Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=480V, ID=5.5A Qgd Gate Drain Charge tD(on) tr tD(off) Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=400V, ID=5.5A, RG=25Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=5.5A,dI/dt=100A/µs,VDS=400V Irm Peak Reverse Recovery Current IF=5.5A,dI/dt=100A/µs,VDS=400V Qrr Body Diode Reverse Recovery Charge IF=5.5A,dI/dt=100A/µs,VDS=400V - 30.8 - - 93.6 - - 1.42 - 16.5 - - 11 - 2.8 - 3.8 - 20 - 20 - 59 - 20 - 250 - 21 - 3.3 - pF pF pF Ω nC nC nC ns ns ns ns ns A µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=2A, VDD=150V, Starting TJ=25°C H. Co(er) is a fixed capacitance that gives the same stored energy as C oss while VDS is rising from 0 to 80% V(BR)DSS. I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. Wavesoldering only allowed at leads. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: September 2013 www.aosmd.com Pa.


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