Document
AOV11S60
600V 8A α MOS TM Power Transistor
General Description
Product Summary
The AOV11S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V
100% UIS Tested 100% Rg Tested
700V 45A 0.5Ω 11nC 2.7µJ
Top View
DFN8X8
Bottom View
D
G
Pin1:G AOV11S60
S S
Pin2: Driver Source
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
TC=25°C Power Dissipation B Derate above 25oC
VGS ID
IDM IDSM
IAR EAR EAS PD
TA=25°C Power Dissipation A TA=70°C
MOSFET dv/dt ruggedness Peak diode recovery dv/dt H
PDSM dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
t ≤ 10s Steady-State
Symbol RθJA
Maximum Junction-to-Case
Steady-State
RθJC
Maximum 600 ±30 8 7.0 45 0.65 0.22 2 60 120 156 1.25 8.3 5.3 100 20
-55 to 150
300
Typ 12 40 0.6
G
Max 15 50 0.8
D
S
Units V V
A
A A mJ mJ W W/ oC W V/ns °C
°C Units °C/W °C/W °C/W
Rev.1.0: September 2013
www.aosmd.com
Page 1 of 7
AOV11S60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V VDS=480V, TJ=150°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=3.8A, TJ=25°C VGS=10V, ID=3.8A, TJ=150°C
VSD Diode Forward Voltage
IS=5.5A,VGS=0V, TJ=25°C
IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed CurrentC
DYNAMIC PARAMETERS
Ciss Input Capacitance Coss Output Capacitance
VGS=0V, VDS=100V, f=1MHz
600 -
-
650 700
-
V
- -1 µA
- 10 -
- - ±100 nΑ
2.8 3.5 4.1
V
- 0.42 0.5 Ω
- 1.17 1.4 Ω
- 0.84 -
V
- - 8A
- - 45 A
- 545 - 37.3 -
pF pF
Co(er) Co(tr)
Effective output capacitance, energy related H
Effective output capacitance, time related I
VGS=0V, VDS=0 to 480V, f=1MHz
Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=5.5A
Qgd Gate Drain Charge
tD(on) tr tD(off)
Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime
VGS=10V, VDS=400V, ID=5.5A, RG=25Ω
tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=5.5A,dI/dt=100A/µs,VDS=400V
Irm
Peak Reverse Recovery Current
IF=5.5A,dI/dt=100A/µs,VDS=400V
Qrr Body Diode Reverse Recovery Charge IF=5.5A,dI/dt=100A/µs,VDS=400V
- 30.8 -
- 93.6 -
- 1.42 - 16.5 -
- 11 - 2.8 - 3.8 - 20 - 20 - 59 - 20 - 250 - 21 - 3.3 -
pF
pF
pF Ω
nC nC nC ns ns ns ns ns A µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=2A, VDD=150V, Starting TJ=25°C H. Co(er) is a fixed capacitance that gives the same stored energy as C oss while VDS is rising from 0 to 80% V(BR)DSS. I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. Wavesoldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: September 2013
www.aosmd.com
Pa.