B645

SavantIC Semiconductor wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Product Specification 2SB645 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO IC Emitter-base voltage Collector current IB Base current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE -200 -200 -5 -15 -5 150 150 -65~150 UNIT V V V A A W SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com Product Specification 2SB645 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A ICBO Collector cut-off current VCB=-200V; IE=0 IEBO Emitter cut-off current hFE DC current gain fT Transition frequency VEB=-6V; IC=0 IC=-1A ; VCE=-5V IC=-0.5A ; VCE=-10V hFE Classifications RO 40-80 70-140 MIN TYP. MAX UNIT -200 V -5 V -3.0 V -0.1 mA -0.1 mA 40 140 12 MHz 2 SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com PACKAGE OUTLINE Product Specification 2SB645 Fig.2 outline ...