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TS12N20CS Dataheets PDF



Part Number TS12N20CS
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Single N-Channel 4.5V Specified MicroSurf
Datasheet TS12N20CS DatasheetTS12N20CS Datasheet (PDF)

PRELIMINARY DATA SHEET TSC TS12N20CS Single N-Channel 4.5V Specified MicroSurf™ Drain-Source Voltage 20 Volt Current ID 12 Ampere Features 12A, 20V RDS(ON)=3.9mΩ at 4.5Volts 12A, 20V Qg =19.8nC at 4.5Volts Low profile package: less than 1mm height when mounted on PCB Occupies only 1/3 the area of SO-8 Excellent thermal characteristics High power and current handling capability Lead free solder balls available Description Taiwan Semiconductor’s new low cost, state of the art MicroSurf™ latera.

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PRELIMINARY DATA SHEET TSC TS12N20CS Single N-Channel 4.5V Specified MicroSurf™ Drain-Source Voltage 20 Volt Current ID 12 Ampere Features 12A, 20V RDS(ON)=3.9mΩ at 4.5Volts 12A, 20V Qg =19.8nC at 4.5Volts Low profile package: less than 1mm height when mounted on PCB Occupies only 1/3 the area of SO-8 Excellent thermal characteristics High power and current handling capability Lead free solder balls available Description Taiwan Semiconductor’s new low cost, state of the art MicroSurf™ lateral MOSFET process technology in chipscale bondwireless packaging minimizes PCB space and RDS(ON) plus provides an ultra-low Qg X RDS(ON) figure of merit. Patent Pending Internal Block Diagram Ds G D Pin Configuration S Standard Application MicroSurf™ for High Frequency DC-DC Converters Bottom: Bump Side -1- Rev. 1 05/2003 TSC Absolute Maximum Ratings TA =25°C unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed VDSS VGSS ID 20 V +12 V 6A 25 A Power Dissipation (Steady State) Operating and Storage Junction Temperature Range Thermal Characteristics PD TJ, TSTG 2.2 - 55 to +150 W °C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case RθJA RθJR RθJC 56 °C/ W 4.5 °C/ W 0.6 °C/ W TS12N20CS Electrical Specifications TA= 25°C unless otherwise specified Characteristics Symbol Conditions Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID= 250µA 20 -- -- V Gate-Body Leakage IGGS VGS= ±12V, VDS=0V -- -- ±150 nA Zero Gate Voltage Drain Current IDSS Tj=150°C, VDS=20V, VGS= 0V -- -- 250 uA Drain to Drain Sense Leakage IDDS Tj=150°C, VDS=20V, VGS= 0V -- -- 250 uA Static Drain-Source On-Resistance RDS(on) VGS= 4.5V, ID= 12A -- 3.9 -- mΩ Drain Sense On-Resistance RDSDS(on) VGS= 4.5V, ID= 0.35A -- 137 -- mΩ Gate Threshold Voltage VGS(th) VDS=VGS, ID= 250uA -- 1.3 -- V Total Gate Charge Qg VDS=20V, VGS= 4.5V, ID= 12A -- 19.8 -- nC Gate Resistance Rg VDS=0V, f =1MHz -- 0.4 -- Ohms Output Capacitance Coss VDS=20V, VGS=0V, f =1MHz -- 2.4 -- nF Input Capacitance Ciss VDS=20V, VGS=0V, f =1MHz -- 320 -- pF Reverse transfer capacitance Crss VDS=20V, VGS=0V, f =1MHz -- TBD -- pF Reverse Recovery time Source-Drain Diode trr If = 12A, di/dt =100A/us Tj=150°C -- -- 40 ns Forward On-Voltage Source-Drain Diode VSD Is= 12A, VGS=0V -- 0.75 -- V On-State Drain Current Avalanche Energy UIS ID(on) Eas VGS=4.5V, VDS=1V Single Pulse 10us, VDS>BVDSS 25 2.5 -- -- A -- -- mJ Rev. 1 05/2003 -2- .


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