Document
PRELIMINARY DATA SHEET
TSC TS12N20CS
Single N-Channel 4.5V Specified MicroSurf™
Drain-Source Voltage
20 Volt
Current ID 12 Ampere
Features
12A, 20V RDS(ON)=3.9mΩ at 4.5Volts 12A, 20V Qg =19.8nC at 4.5Volts Low profile package: less than 1mm height when mounted on PCB Occupies only 1/3 the area of SO-8
Excellent thermal characteristics High power and current handling capability Lead free solder balls available
Description
Taiwan Semiconductor’s new low cost, state of the art MicroSurf™ lateral MOSFET process technology in chipscale bondwireless packaging minimizes PCB space and RDS(ON) plus provides an ultra-low Qg X RDS(ON) figure of merit.
Patent Pending
Internal Block Diagram Ds G
D
Pin Configuration
S
Standard Application
MicroSurf™ for High Frequency DC-DC Converters
Bottom: Bump Side
-1-
Rev. 1 05/2003
TSC
Absolute Maximum Ratings TA =25°C unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
Gate-Source Voltage Drain Current – Continuous
– Pulsed
VDSS
VGSS ID
20 V
+12 V 6A 25 A
Power Dissipation (Steady State) Operating and Storage Junction Temperature Range
Thermal Characteristics
PD TJ, TSTG
2.2 - 55 to +150
W °C
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case
RθJA RθJR RθJC
56 °C/ W 4.5 °C/ W 0.6 °C/ W
TS12N20CS Electrical Specifications TA= 25°C unless otherwise specified
Characteristics
Symbol Conditions
Min Typ Max Unit
Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID= 250µA
20 -- -- V
Gate-Body Leakage
IGGS VGS= ±12V, VDS=0V
-- -- ±150 nA
Zero Gate Voltage Drain Current
IDSS Tj=150°C, VDS=20V, VGS= 0V
--
-- 250 uA
Drain to Drain Sense Leakage
IDDS Tj=150°C, VDS=20V, VGS= 0V
--
-- 250 uA
Static Drain-Source On-Resistance RDS(on) VGS= 4.5V, ID= 12A
-- 3.9 -- mΩ
Drain Sense On-Resistance
RDSDS(on) VGS= 4.5V, ID= 0.35A
-- 137 -- mΩ
Gate Threshold Voltage
VGS(th) VDS=VGS, ID= 250uA
-- 1.3 -- V
Total Gate Charge
Qg VDS=20V, VGS= 4.5V, ID= 12A
-- 19.8 -- nC
Gate Resistance
Rg VDS=0V, f =1MHz
-- 0.4 -- Ohms
Output Capacitance
Coss VDS=20V, VGS=0V, f =1MHz
-- 2.4 -- nF
Input Capacitance
Ciss VDS=20V, VGS=0V, f =1MHz
-- 320 -- pF
Reverse transfer capacitance
Crss VDS=20V, VGS=0V, f =1MHz
-- TBD -- pF
Reverse Recovery time Source-Drain Diode
trr If = 12A, di/dt =100A/us Tj=150°C
-- -- 40 ns
Forward On-Voltage Source-Drain Diode
VSD Is= 12A, VGS=0V
-- 0.75 -- V
On-State Drain Current Avalanche Energy UIS
ID(on) Eas
VGS=4.5V, VDS=1V Single Pulse 10us, VDS>BVDSS
25 2.5
-- -- A -- -- mJ
Rev. 1 05/2003
-2-
.