L-34F3BT

T-1 (3mm) INFRARED EMITTING DIODE Part Number: L-34F3BT Features z Mechanically and spectrally matched to the phototransistor. z RoHS compliant. Description F3 Made with Gallium Arsenide Infrared Emitting diodes. KingbrightPackage Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. SPEC NO: DSAA4947 APPROVED: WYNEC REV NO: V.14A CHECKED: Allen Liu DATE: APR/16/2013 DRAWN: Q.M.Chen PAGE: 1 OF 6 ERP: 1101029201 Selection Guide Part No. Dice Lens Type Po (mW/sr) [2] @ 20mA Min. Typ. L-34F3BT F3 (GaAs) Blue Transparent 8 12 *3 *8 Notes: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value. 2. Radiant Intensity/ luminous flux: +/-15%. *Radiant Intensity value is traceable to the CIE127-2007 compliant national standards. Po (mW/sr) [2] @ 50mA Min. Typ. 18 32 *8 *15 Viewing Angle [1] 2θ1/2 50° Electrical / Optical Characteristics at TA=25°C Parameter P/N Symbol Typ. Forward Voltage [1] F3 VF 1.2 tReverse Current F3 IR hCapacitance F3 C 90 rigPeak Spectral Wavelength F3 λP 940 Spectral Bandwidth F3 Δλ1/2 50 Note: b1. Forward Voltage: +/-0.1V. King2. Wavelength value is traceable to the CIE127-2007 compliant national standards. Max. ...