T-1 (3mm) INFRARED EMITTING DIODE
Part Number: L-34F3BT
Features
z Mechanically and spectrally matched to the phototran...
T-1 (3mm) INFRARED EMITTING DIODE
Part Number: L-34F3BT
Features
z Mechanically and spectrally matched to the photo
transistor. z RoHS compliant.
Description
F3 Made with Gallium Arsenide Infrared Emitting diodes.
KingbrightPackage Dimensions
Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted.
3. Lead spacing is measured where the leads emerge from the package. 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice.
SPEC NO: DSAA4947 APPROVED: WYNEC
REV NO: V.14A CHECKED: Allen Liu
DATE: APR/16/2013 DRAWN: Q.M.Chen
PAGE: 1 OF 6 ERP: 1101029201
Selection Guide
Part No.
Dice
Lens Type
Po (mW/sr) [2] @ 20mA
Min.
Typ.
L-34F3BT
F3 (GaAs)
Blue Transparent
8 12 *3 *8
Notes: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value. 2. Radiant Intensity/ luminous flux: +/-15%.
*Radiant Intensity value is traceable to the CIE127-2007 compliant national standards.
Po (mW/sr) [2] @ 50mA
Min. Typ.
18 32
*8 *15
Viewing Angle [1]
2θ1/2
50°
Electrical / Optical Characteristics at TA=25°C
Parameter
P/N
Symbol
Typ.
Forward Voltage [1]
F3 VF 1.2
tReverse Current
F3 IR
hCapacitance
F3 C 90
rigPeak Spectral Wavelength
F3 λP 940
Spectral Bandwidth
F3
Δλ1/2
50
Note:
b1. Forward Voltage: +/-0.1V. King2. Wavelength value is traceable to the CIE127-2007 compliant national standards.
Max. ...