KP-2012F3C

2.0x1.25mm INFRARED EMITTING DIODE Part Number: KP-2012F3C Features z 2.0mmx1.25mm SMT LED,1.1mm thickness. z Mechanically and spectrally matched to the phototransistor. z Package: 2000pcs / reel. z Moisture sensitivity level : level 3. z RoHS compliant. Description F3 Made with Gallium Arsenide Infrared Emitting diodes. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. SPEC NO: DSAA4437 APPROVED: WYNEC REV NO: V.13A CHECKED: Allen Liu DATE: NOV/04/2011 DRAWN: Y.H.Wu PAGE: 1 OF 5 ERP: 1203000103 Selection Guide Part No. Dice Lens Type KP-2012F3C F3 (GaAs) Water Clear Notes: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value. 2. Radiant Intensity/ luminous flux: +/-15%. *Radiant Intensity value is traceable to the CIE127-2007 compliant national standards. Po (mW/sr) [2] Viewing @ 20mA Angle [1] Min. Typ. 2θ1/2 1.2 3 *0.8 *2 120° Electrical / Optical Characteristics at TA=25°C Parameter P/N Symbol Typ. Forward Voltage [1] F3 VF 1.2 Reverse Current F3 IR Capacitance F3 C 90 Peak Spectral Wavelength F3 λP 940 Spectral Bandwidth F3 Δλ1/2 50 Note: 1. Forward Voltage: +/-0.1V. 2. Wave...