KTC3199

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. FEATURES ᴌHigh DC Current Gain : hFE=70~700. ᴌExcellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). ᴌComplementary to KTA1267. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IE PC Tj Storage Temperature Range Tstg RATING 50 50 5 150 -150 400 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ J K D KTC3199 EPITAXIAL PLANAR NPN TRANSISTOR B F A HM C EE 1 2 3N L 1. EMITTER 2. COLLECTOR 3. BASE G O DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX D 2.40+_ 0.15 E 1.27 F 2.30 G 14.00+_ 0.50 H 0.60 MAX J 1.05 K 1.45 L 25 M 0.80 N 0.55 MAX O 0.75 TO-92M ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO IEBO hFE (Note) VCE(sat) fT Cob VCB=50V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC=100mA, IB=10mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz Noise Figure Note : hFE Classification NF VCE=6V, IC=0.1mA, f=1kHz, Rg=10kή O:70ᴕ140 , Y:120ᴕ240 , GR:200ᴕ400, BL:300~700. MIN. 70 80 - TYP. 0.1 2.0 1.0 MAX. 0.1 0.1 700 0.25 3.5 10 UNIT ỌA ỌA V MHz pF dB 1996. 5. 30 Revision No : 1 1/3 COLLECTOR CURRENT I C (mA) KTC3199 2...