PHOTOTRANSISTOR
Part Number: L-7113P3C
Features
z Mechanically and spectrally matched to the infrared emitting LED lamp...
PHOTO
TRANSISTOR
Part Number: L-7113P3C
Features
z Mechanically and spectrally matched to the infrared emitting LED lamp . z RoHS compliant.
Description
Made with
NPN silicon photo
transistor chips.
KingbrightPackage Dimensions
Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted.
3. Lead spacing is measured where the leads emerge from the package. 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice.
SPEC NO: DSAC9295 APPROVED: WYNEC
REV NO: V.13 CHECKED: Allen Liu
DATE: APR/09/2013 DRAWN: Y.Liu
PAGE: 1 OF 5 ERP: 1101005148
Electrical / Optical Characteristics at TA=25°C
Symbol
Parameter
Min.
Typ.
Max.
Units Test Conditions
VBR CEO
Collector-to-Emitter Breakdown Voltage
VBR ECO
Emitter-to-Collector Breakdown Voltage
VCE (SAT)
Collector-to-Emitter Saturation Voltage
I CEO
Collector Dark Current
30 5
V
IC=100uA Ee=0mW/cm2
V
IE=100uA Ee=0mW/cm2
0.8
V
IC=2mA Ee=20mW/cm2
100
nA
VCE=10V Ee=0mW/cm2
TR Rise Time (10% to 90% ) TF Fall Time (90% to 10% )
15 us VCE = 5V IC=1mA
15 us RL=1000Ω
I (ON) 2θ1/2
On State Collector Current Angle of half sensitivity
0.5 2.5 - 20
VCE = 5V mA Ee=1mW/cm2
λ=940nm
- deg
-
rightAbsolute Maximum Ratings at TA=25°C Parameter
bCollector-to-Emitter Voltage gEmitter-to-Collector Voltage
Power Dissipation at (or below) 25°C Free Air Temperature
inOperating Temperature KStorage Temperature
M...