L-7113P3C

PHOTOTRANSISTOR Part Number: L-7113P3C Features z Mechanically and spectrally matched to the infrared emitting LED lamp . z RoHS compliant. Description Made with NPN silicon phototransistor chips. KingbrightPackage Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. SPEC NO: DSAC9295 APPROVED: WYNEC REV NO: V.13 CHECKED: Allen Liu DATE: APR/09/2013 DRAWN: Y.Liu PAGE: 1 OF 5 ERP: 1101005148 Electrical / Optical Characteristics at TA=25°C Symbol Parameter Min. Typ. Max. Units Test Conditions VBR CEO Collector-to-Emitter Breakdown Voltage VBR ECO Emitter-to-Collector Breakdown Voltage VCE (SAT) Collector-to-Emitter Saturation Voltage I CEO Collector Dark Current 30 5 V IC=100uA Ee=0mW/cm2 V IE=100uA Ee=0mW/cm2 0.8 V IC=2mA Ee=20mW/cm2 100 nA VCE=10V Ee=0mW/cm2 TR Rise Time (10％ to 90％ ) TF Fall Time (90％ to 10％ ) 15 us VCE = 5V IC=1mA 15 us RL=1000Ω I (ON) 2θ1/2 On State Collector Current Angle of half sensitivity 0.5 2.5 - 20 VCE = 5V mA Ee=1mW/cm2 λ=940nm - deg - rightAbsolute Maximum Ratings at TA=25°C Parameter bCollector-to-Emitter Voltage gEmitter-to-Collector Voltage Power Dissipation at (or below) 25°C Free Air Temperature inOperating Temperature KStorage Temperature M...