2SD2655

2SD2655 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier Preliminary Datasheet R07DS0281EJ0400 Rev.4.00 Jan 10, 2014 Features Small size package: MPAK (SC–59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) Complementary pair with 2SB1691 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 Note: Marking is “WM-“. 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Item Symbol Collector to Base Voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current VCBO VCEO VEBO IC ic(peak) Collector power dissipation Junction temperature PC Tj Storage temperature Tstg Note: *When using alumina ceramic board (25 x 60 x 0.7 mm) Ratings 60 50 6 1 2 800* 150 −55 to +150 (Ta = 25°C) Unit V V V A A mW °C °C R07DS0281EJ0400 Rev.4.00 Jan 10, 2014 Page 1 of 6 2SD2655 Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Collector to base breakdown voltage V(BR)CBO 60 ⎯ ⎯ Collector to emitter breakdown voltage V(BR)CEO 50 ⎯ ⎯ Emitter to base breakdown voltage V(BR)EBO 6 ⎯⎯ Collector cutoff current ICBO ⎯ ⎯ 100 Emitter cutoff current IEBO ⎯ ⎯ 100 DC current transfer ratio hFE 200 ⎯ 500 Collector to emitter saturation voltage VCE(sat) ⎯ 0.16 0.3 V IC = 10 μA, IE...