HEXFET Chip-Set for DC-DC Converters
PD – 95290
IRF7807PbF IRF7807APbF
HEXFET® Chip-Set for DC-DC Converters
• N Channel Application Specific MOSFETs • Ide...
Description
PD – 95290
IRF7807PbF IRF7807APbF
HEXFET® Chip-Set for DC-DC Converters
N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Lead-Free
Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors.
A pair of IRF7807 devices provides the best cost/ performance solution for system voltages, such as 3.3V and 5V.
SO-8
S1 S2 S3 G4
A 8D 7D 6D 5D
Top View
Device Features
IRF7807 IRF7807A
Vds 30V 30V
Rds(on) 25mΩ 25mΩ
Qg 17nC 17nC
Qsw
5.2nC
Qoss 16.8nC 16.8nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
25°C
Current (VGS ≥ 4.5V) Pulsed Drain Current
70°C
Power Dissipation
25°C
70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed source Current
Symbol VDS VGS I
D
IDM PD
TJ, TSTG I
S
ISM
IRF7807
IRF7807A
30
±12
8.3 8.3
6.6 6.6
66 66
2.5
1.6
–55 to 150
2.5 2.5
66 66
Units V A
W °C A
Thermal Resistance Parameter Maximum Junction-to-Ambient
RθJA
Max. 50
Units °C/W
www.irf.com
1
09/22/04
IRF7807/APbF
Electrical Characteristics
Parameter
Drain-to-Source Breakdown Voltage*
V(BR)DSS
Static Drain-Source on Resistance*
RDS(on)
Gate Thres...
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