IRF7807PbF

PD – 95290 IRF7807PbF IRF7807APbF HEXFET® Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Lead-Free Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. A pair of IRF7807 devices provides the best cost/ performance solution for system voltages, such as 3.3V and 5V. SO-8 S1 S2 S3 G4 A 8D 7D 6D 5D Top View Device Features IRF7807 IRF7807A Vds 30V 30V Rds(on) 25mΩ 25mΩ Qg 17nC 17nC Qsw 5.2nC Qoss 16.8nC 16.8nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source 25°C Current (VGS ≥ 4.5V) Pulsed Drain Current 70°C Power Dissipation 25°C 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed source Current Symbol VDS VGS I D IDM PD TJ, TSTG I S ISM IRF7807 IRF7807A 30 ±12 8.3 8.3 6.6 6.6 66 66 2.5 1.6 –55 to 150 2.5 2.5 66 66 Units V A W °C A Thermal Resistance Parameter Maximum Junction-to-Ambientƒ RθJA Max. 50 Units °C/W www.irf.com 1 09/22/04 IRF7807/APbF Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage* V(BR)DSS Static Drain-Source on Resistance* RDS(on) Gate Thres...