SQD50P06-15L

www.vishay.com SQD50P06-15L Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration TO-252 - 60 0.0155 0.0200 - 50 Single S FEATURES TrenchFET® Power MOSFET Package with Low Thermal Resistance 100 % Rg and UIS Tested AEC-Q101 Qualified Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 G GDS Top View Drain Connected to Tab D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TO-252 SQD50P06-15L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Currenta TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT - 60 ± 20 - 50 - 38 - 50 - 200 - 52 135 136 45 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). PCB Mountc SYMBOL RthJA RthJC LIMIT 50 1.1 UNIT V A mJ W °C UNIT °C/W S12-2006-Rev. E, 20-Aug-12 1 Document Number: 69098 For technical question...