P-CHANNEL ENHANCEMENT MODE POWER MOSFET
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
SD4953BDY
Description
The SD4953BDY provide the designer with the best combina...
Description
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
SD4953BDY
Description
The SD4953BDY provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
* Simple Drive Requirement * Lower on-resistance
BVDSS RDS(ON)
- 30 V 42 mΩ
* Fast Switching
ID - 5 A
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current2 Total Power Dissipation1
VDS VGS ID @TA=25℃ ID @TA=70℃ IDM PD @TA=25℃
Linear Derating Factor
operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Data
Parameter Thermal Resistance Junction-ambient1 Max.
Symbol Rthj-amb
Ratings -30 +/- 20
-5 -4 -20 2 0.02 -55~+150
Value 62.5
Unit V V A A A W
W/℃ ℃
Unit ℃/W
SD4953BDY
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P-CHANNEL ENHANCEMENT MODE POWER MOSFET Electrical Characteristics (Tj = 25℃ unless otherwise specified)
SD4953BDY
Source-Drain Diode
Notes: 1. Surface Mounted on FR4 Board, t≦10sec. 2. Pulse width≦300us, duty cycle≦2%.
SD4953BDY
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P-CHANNEL ENHANCEMENT MODE POWER MOSFET
SD4953BDY
Characteristics Curve Fig 1. Typical Output Characteristics
Fig 2. Transfer Characteristics
Fig 3. Transconductance v.s. Drain Current Fig 4. On-Resistance v.s. Junction Te...
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