SD4953BDY

P-CHANNEL ENHANCEMENT MODE POWER MOSFET SD4953BDY Description The SD4953BDY provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features * Simple Drive Requirement * Lower on-resistance BVDSS RDS(ON) - 30 V 42 mΩ * Fast Switching ID - 5 A Package Dimensions Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current2 Total Power Dissipation1 VDS VGS ID @TA=25℃ ID @TA=70℃ IDM PD @TA=25℃ Linear Derating Factor operating Junction and Storage Temperature Range Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient1 Max. Symbol Rthj-amb Ratings -30 +/- 20 -5 -4 -20 2 0.02 -55~+150 Value 62.5 Unit V V A A A W W/℃ ℃ Unit ℃/W SD4953BDY Page: 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET Electrical Characteristics (Tj = 25℃ unless otherwise specified) SD4953BDY Source-Drain Diode Notes: 1. Surface Mounted on FR4 Board, t≦10sec. 2. Pulse width≦300us, duty cycle≦2%. SD4953BDY Page: 2/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET SD4953BDY Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. Transconductance v.s. Drain Current Fig 4. On-Resistance v.s. Junction Te...