WPM2026

WPM2026 WPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET Http//:www.willsemi.com VDS (V) -20 Rds(on) (ȍ) 0.056@ VGS=̢4.5V 0.069@ VGS=̢2.5V 0.086@ VGS=̢1.8V Descriptions The WPM2026 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2026 is Pb-free. Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 SOT-23 D 3 12 GS Pin configuration (Top view) 3 W26* 12 W26= Device Code * = Month (A~Z) Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging Marking Order information Device Package Shipping WPM2026-3/TR SOT-23 3000/Reel&Tape Will Semiconductor Ltd. 1 12/2011 - Rev.2.2 Absolute Maximum ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Maximum Power Dissipation a Continuous Drain Current b Maximum Power Dissipation b Pulsed Drain Current c Operating Junction Temperature Lead Temperature Storage Temperature Range WPM2026 TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C Symbol VDS VGS ID PD ID PD IDM TJ TL Tstg 10 S Steady State -20 ± -3.2 -2.9 -2.6 -2.3 0.9 0.8 0.6 0.5 -2.9 -2.7 -2.3 -2.1 0.7 0.6 0.5 0.4 -12 150 260 -55 t...