STW60N65M5

STW60N65M5 STFW60N65M5 N-channel 650 V, 0.049 Ω, 46 A MDmesh™ V Power MOSFET in TO-247, TO-3PF Features Order codes STFW60N65M5 t(s)STW60N65M5 VDSS @ TJmax 710 V RDS(on) max < 0.059 Ω ID 46 A c■ Worldwide best RDS(on) * area amongst the usilicon based devices rod■ Higher VDSS rating P■ High dv/dt capability te■ Excellent switching performance le■ Easy to drive so■ 100% avalanche tested ObApplication ) -Switching applications ct(sDescription duThe devices are N-channel MDmesh™ V Power roMOSFET based on an innovative proprietary Pvertical process technology, which is combined tewith STMicroelectronics’ well-known lePowerMESH™ horizontal layout structure. The resulting product has extremely low on- soresistance, which is unmatched among siliconbbased Power MOSFETs, making it especially Osuitable for applications which require superior 3 2 1 TO-247 1 3 2 1 TO-3PF Figure 1. Internal schematic diagram $ ' 3 !-V power density and outstanding efficiency. Table 1. Device summary Order codes STFW60N65M5 STW60N65M5 Marking 60N65M5 Package TO-3PF TO-247 Packaging Tube May 2011 Doc ID 18222 Rev 2 1/16 www.st.com 16 Contents Contents STFW60N65M5, STW60N65M5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . ...