2SB1721

Silicon Power Transistors 2SB1721 PNP 2SB1721 IC OA FA 2SB1721 2SB1721-Z TO-251 MP-3 TO-252 MP-3Z hFE 100 VCE = –5.0 V, IC = –0.5 A Z TA = 25°C - VCBO - VCEO - VEBO IC(DC) IC(pulse) PW 10 ms, Duty Cycle 50% IB(DC) PT Tj Tstg TC = 25°C TA = 25°C –60 –60 –7.0 –3.0 –6.0 V V V A A –1.0 20 1.0 150 –55 +150 A W W °C °C (TO-251) (TO-252) D16287JJ2V0DS00 July 2006 NS CP(K) PDF 2 2002 TA = 25°C PW ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob ton tstg tf 350 μs, Duty Cycle VCB = −60 V, IE = 0 A VCE = −5.0 V, IC = −0.5 A VCE = −5.0 V, IC = −3 A IC = −3.0 A, IB = −300 mA IC = −3.0 A, IB = −300 mA VCE = −5.0 V, IC = −0.5 A VCB = −10 V, IE = 0 A, f = 1.0 MHz IC = −2.0 A, RL = 15 Ω, IB1 = –IB2 = −200 mA, VCC –30 V 2% ton tstg tf VIN PW PW 50 μs Duty Cycle 2% RL IC IB1 T.U.T. IB2 VBB 5.0 V VCC 2SB1721 MIN. 100 20 TYP. 5 80 0.4 1.7 0.5 MAX. −10 400 −1.0 −2.0 μA − − V V MHz pF μs μs μs IB2 IB1 10% 90% IC ton tstg tf 2 D16287JJ2V0DS PT - Total Power Dissipation - W IC - Collector Current - A TA = 25°C TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 25 20 15 10 5 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA - 100 - 10 IC(pulse) = −6 A TA = 25°C Single pulse -1 - 0.1 IC(DC) = −3 A PW = 1 ms 10 ms Power Dissipation Lim ited DC - 0.01 - 0.1 -1 - 10 - 100 VCE - Collector to Emitter Voltage - V DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 VCE = −5.0 V P u ls e d 100 TA = 150°C 75°C 25°C −25°C −50°C 10 1 - 0.0...