2SA1235

〈SMALL-SIGNAL TRANSISTOR〉 DESCRIPTION 2SA1235 is a mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ●Small collector to emitter saturation voltage. VCE(sat)=-0.3V max（@Ic=-100mA,IB=-10mA） ●Excellent linearity of DC forward gain. ●Super mini package for easy mounting 2.9 1.90 0.95 0.95 0.4 2SA1235 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type) OUTLINE DRAWING 0.5 2.5 1.5 0.5 Unit：ｍｍ ① ②③ 1.1 0.8 0～0.1 0.16 APPLICATION For Hybrid IC,small type machine low frequency voltage Amplify application. MAXIMUM RATINGS（Ta=25℃） Symbol Parameter VCBO Collector to Base voltage VCEO Collector to Emitter voltage VEBO Emitter to Base voltage I O Collector current Pc Collector dissipation Tj Junction temperature Tstg Storage temperature Ratings -50 -50 -6 -200 200 ＋150 -55～＋150 Unit V V V mA mW ℃ ℃ JEITA：SC-59 JEDEC：Similar to TO-236 TERMINAL CONNECTER ①：BASE ②：EMITTER ③：COLLECTOR ELECTRICAL CHARACTERISTICS（Ta=25℃） Parameter Symbol Test conditions C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain C to E Saturation Vlotage Gain bandwidth product Collector output capacitance Noise figure V(BR)CEO ICBO IEBO hFE hFE VCE(sat) fT Cob NF I C=-100μA ,R BE=∞ V CB=-50V, I E=0mA V EB=-6V, I C=0mA V CE=-6V, I C=-1mA ※ V CE=-6V, I C=-0.1mA I C=-100mA ,IB=-10mA V CE=-6V, I E=10mA V CB=-6V, I E=0,f=1MHz ...