Document
STB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4
N-channel 100 V, 0.015 Ω, 60 A, STripFET™ DeepGATE™ Power MOSFET in TO-220, DPAK, TO-247, D2PAK
Features
Type
STB70N10F4 STD70N10F4 STP70N10F4 STW70N10F4
VDSS 100 V 100 V 100 V 100 V
RDS(on) max < 0.0195 Ω < 0.0195 Ω < 0.0195 Ω < 0.0195 Ω
ID 65 A 60 A 65 A 65 A
■ Exceptional dv/dt capability ■ Extremely low on-resistance RDS(on) ■ 100% avalanche tested
Application
■ Switching applications
Description
This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performance.
3 2 1
TO-247
3 2 1
TO-220
3 1
DPAK
3 1
D²PAK
Figure 1. Internal schematic diagram
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Table 1. Device summary Order codes STB70N10F4 STD70N10F4 STP70N10F4 STW70N10F4
Marking 70N10F4 70N10F4 70N10F4 70N10F4
3
!-V
Package D²PAK DPAK TO-220 TO-247
Packaging Tape and reel Tape and reel
Tube Tube
October 2009
Doc ID 15207 Rev 3
1/18
www.st.com
18
Contents
Contents
STB/D/P/W70N10F4
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
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STB/D/P/W70N10F4
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID IDM (1)
Drain current (continuous) at TC = 100 °C Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Derating factor
EAS (2) Single pulse avalanche energy
Tstg Storage temperature
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area
2. Starting Tj = 25 °C, ID= 32.5 A, VDD= 45 V
Value
TO-220, TO-247, D²PAK
100 ± 20 65 46 260 150 1 120
DPAK
60 43 240 125 0.83
– 55 to 175
Unit
V V A A A W W/°C mJ
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-a Thermal resistance junction-ambient max
Tl
Maximum lead temperature for soldering purpose
1. When mounted on FR-4 board of 1 inch², 2 oz Cu
Value
TO-220, TO-247, D²PAK
1 62.5
DPAK
1.2 50 (1)
300
Unit
°C/W °C/W
°C
Doc ID 15207 Rev 3
3/18
Electrical characteristics
2 Electrical characteristics
STB/D/P/W70N10F4
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source V(BR)DSS Breakdown voltage
IDSS
Zero gate voltage Drain current (VGS = 0)
IGSS VGS(th) RDS(on)
Gate-body leakage current (VDS = 0) Gate threshold voltage
Static drain-source on resistance
Test conditions
Min. Typ. Max. Unit
ID = 250 µA, VGS = 0
100
V
VDS = max rating VDS = max rating,TC=125 °C
1 µA 100 µA
VGS = ± 20 V
100 nA
VDS = VGS, ID = 250 µA
2
4V
VGS = 10 V, ID = 30 A
0.015 0.0195 Ω
Table 5. Symbol
Dynamic Parameter
Ciss Coss
Crss
Qg Qgs Qgd
Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge
Table 6. Symbol
Switching times Parameter
td(on) tr
Turn-on delay time Rise time
td(off) tf
Turn-off-delay time Fall time
Test conditions
VDS = 25 V, f = 1 MHz, VGS = 0
VDD = 80 V, ID = 65 A, VGS = 10 V (see Figure 16)
Min. Typ. Max. Unit
5800
pF
- 300 - pF
190 pF
85 nC - 20 - nC
25 nC
Test conditions
VDD = 50 V, ID = 30 A RG = 4.7 Ω VGS = 10 V (see Figure 15)
VDD = 50 V, ID = 30 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15)
Min. Typ. Max. Unit 30 ns
-20 ns 65 ns
-20 ns
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STB/D/P/W70N10F4
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
ISD ISDM (1) VSD (2)
Source-drain current Source-drain current (pulsed) Forward on voltage
ISD = 60 A, VGS = 0
-
60 A 240 A 1.5 V
trr Qrr IRRM
Reverse recovery time Reverse recovery charge Reverse recovery current
ISD = 60 A, VDD = 25 V
80
di/dt = 100 A/µs,
- 280
Tj = 150 °C (see Figure 17)
6.7
ns nC A
1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15207 Rev 3
5/18
Electrical characteristics
STB/D/P/W70N10F4
2.1 Electrical characteristics (curves)
Figure 2.
ID (A)
Safe operating area for TO-220, TO-247, D²PAK
Figure 3.
AM03243v1
Thermal impedance for TO-220, TO-247, D²PAK
LiOmipteerdatibyon imnaxthiRsDSa(rone)a is
100
.