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K2554 Dataheets PDF



Part Number K2554
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK2554
Datasheet K2554 DatasheetK2554 Datasheet (PDF)

2SK2554 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • RDS(on) = 4.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO-3P ADE-208-359 D 5th. Edition D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2554 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche ene.

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2SK2554 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • RDS(on) = 4.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO-3P ADE-208-359 D 5th. Edition D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2554 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I *1 D(pulse) I DR* 2 I AP * 3 EAR* 3 Pch*2 Tch Tstg Ratings 60 ±20 75 300 75 50 214 150 150 –55 to +150 Unit V V A A A A mJ W °C °C 2 2SK2554 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 60 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance — — 1.0 — — Forward transfer admittance |yfs| Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 50 — — — — — — — — — Typ Max Unit — —V — —V — ±10 µA — 100 µA — 2.0 V 4.5 6 mΩ 5.8 10 mΩ 80 — S 7700 4100 760 60 420 1200 900 0.95 — — — — — — — — pF pF pF ns ns ns ns V 105 — ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 40 A VGS = 10 V*1 ID = 40 A VGS = 4 V*1 ID = 40 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 40 A VGS = 10 V RL = 0.75 Ω IF = 75 A, VGS = 0 IF = 75 A, VGS = 0 diF / dt = 50 A / µs 3 Channel Dissipation Pch (W) 2SK2554 Power vs. Temperature Derating 200 150 100 50 0 50 100 150 200 Case Temperature Tc (°C) Drain Current I D (A) Maximum Safe Operation Area 500 200 100 50 20 Operation in 10 this area is PW = 10 1 ms 10 100 µs ms (1shot) µs 5 limited by R DS(on) Operation (Tc = 25°C) DC 2 1 0.5 Ta = 25 °C 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) Drain Current I D (A) Typical Output Characteristics 10 V 5 V 100 4V 3V 80 Pulse Test 60 40 2.5 V 20 VGS = 2 V 0 2 4 6 8 10 Drain to Source Voltage V DS (V) Drain Current I D (A) Typical Transfer Characteristics 100 V DS = 10 V 80 Pulse Test 60 40 Tc = 75°C 20 25°C –25°C 0 1 23 45 Gate to Source Voltage V GS (V) 4 Drain to Source Voltage V DS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 Pulse Test 0.4 0.3 I D = 50 A 0.2 0.1 20 A 10 A 0 2 4 6 8 10 Gate to Source Voltage V GS (V) Drain to Source On State Resistance R DS(on) ( Ω ) 2SK2554 Static Drain to Source on State Resistance.


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