Document
2SK2554
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • RDS(on) = 4.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
TO-3P
ADE-208-359 D 5th. Edition
D
G1 2 3 1. Gate 2. Drain (Flange)
S 3. Source
2SK2554
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS VGSS ID I *1
D(pulse)
I DR* 2 I AP * 3 EAR* 3 Pch*2
Tch
Tstg
Ratings 60 ±20 75 300 75 50 214 150 150 –55 to +150
Unit V V A A A A mJ W °C °C
2
2SK2554
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
60
Gate to source breakdown voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on) resistance
— — 1.0 —
—
Forward transfer admittance |yfs|
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test
Ciss Coss Crss t d(on) tr t d(off) tf VDF
t rr
50
— — — — — — — —
—
Typ Max Unit — —V
— —V
— ±10 µA
— 100 µA
— 2.0 V
4.5 6
mΩ
5.8 10
mΩ
80 — S
7700 4100 760 60 420 1200 900 0.95
— — — — — — — —
pF pF pF ns ns ns ns V
105 —
ns
Test Conditions ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 40 A VGS = 10 V*1 ID = 40 A VGS = 4 V*1 ID = 40 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 40 A VGS = 10 V RL = 0.75 Ω
IF = 75 A, VGS = 0
IF = 75 A, VGS = 0 diF / dt = 50 A / µs
3
Channel Dissipation Pch (W)
2SK2554
Power vs. Temperature Derating 200
150
100
50
0 50 100 150 200 Case Temperature Tc (°C)
Drain Current I D (A)
Maximum Safe Operation Area
500
200 100
50
20 Operation in
10 this area is
PW
=
10
1 ms
10 100 µs ms
(1shot)
µs
5 limited by R DS(on)
Operation (Tc = 25°C) DC
2
1 0.5 Ta = 25 °C
0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V)
Drain Current I D (A)
Typical Output Characteristics
10 V 5 V 100
4V
3V
80 Pulse Test
60
40 2.5 V
20 VGS = 2 V
0 2 4 6 8 10 Drain to Source Voltage V DS (V)
Drain Current I D (A)
Typical Transfer Characteristics 100
V DS = 10 V 80 Pulse Test
60
40 Tc = 75°C
20
25°C –25°C
0 1 23 45 Gate to Source Voltage V GS (V)
4
Drain to Source Voltage V DS(on) (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
0.5 Pulse Test
0.4
0.3 I D = 50 A
0.2
0.1 20 A 10 A
0 2 4 6 8 10 Gate to Source Voltage V GS (V)
Drain to Source On State Resistance R DS(on) ( Ω )
2SK2554
Static Drain to Source on State Resistance.