IXFT26N60

HiPerFETTM Power MOSFETs IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr Preliminary data V DSS I D25 600 V 26 A 600 V 28 A trr £ 250 ns R DS(on) 0.25 W 0.25 W Symbol VDSS VDGR V GS VGSM I D25 I DM I AR EAR EAS dv/dt P D TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient T C = 25°C, Chip capability T C = 25°C, pulse width limited by T JM T C = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W T C = 25°C 1.6 mm (0.063 in) from case for 10 s Mounting torque Maximum Ratings IXFH/ IXFT IXFK 600 600 600 600 ±20 ±20 ±30 ±30 26 28 104 112 26 28 50 50 1.5 1.5 V V V V A A A mJ J 5 5 V/ns 360 416 -55 ... +150 150 -55 ... +150 300 300 W °C °C °C °C 1.13/10 6 0.9/6 Nm/lb.in. 10 g TO-247 AD (IXFH) TO-268 (D3) ( IXFT) G S TO-264 AA (IXFK) (TAB) (TAB) G D S D (TAB) G = Gate S = Source TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Symbol VDSS VGS(th) I GSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA V GS = ±20 V, DC V DS = 0 VDS = 0.8 VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % 600 2 V 4.5 V ±200 nA 25 mA 1 mA 0.25 W Features International standard packages EpoxymeetUL94V-0, fl...