Document
STB6N60M2, STD6N60M2
N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2 Power MOSFETs in D2PAK and DPAK packages
Datasheet - production data
TAB
3 1
D2 PAK
TAB
3 1
DPAK
Features
Order code
STB6N60M2 STD6N60M2
VDS @ TJmax
650 V
RDS(on) max
1.2 Ω
ID 4.5 A
• Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected
Figure 1. Internal schematic diagram , TAB
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Order code STB6N60M2 STD6N60M2
AM15572v1
Table 1. Device summary
Marking
Package
6N60M2
D2PAK DPAK
Packing Tape and reel
May 2016
This is information on a product in full production.
DocID024772 Rev 3
1/21.