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FX20KMJ-2

Mitsubishi Electric Semiconductor

P-Channel MOSFET

PRELIMINARYNSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change. FX20KMJ-2 MITSUBISHI Pch POWE...


Mitsubishi Electric Semiconductor

FX20KMJ-2

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PRELIMINARYNSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change. FX20KMJ-2 MITSUBISHI Pch POWER MOSFET FX20KMJ-2 HIGH-SPEED SWITCHING USE OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 6.5 ± 0.3 15 ± 0.3 3 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 4V DRIVE VDSS ............................................................. –100V rDS (ON) (MAX) ................................................ 0.26Ω ID .................................................................... –20A Integrated Fast Recovery Diode (TYP.) .........100ns Viso ................................................................................ 2000V APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 2.54 ± 0.25 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 2.54 ± 0.25 0.75 ± 0.15 2.6 ± 0.2 4.5 ± 0.2 123 3 1 GATE 1 2 DRAIN 3 SOURCE 2 TO-220FN MAXIMUM RATINGS (Tc = 25°C) Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso — Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V L = 50µH Conditions AC for 1minute, Terminal to case Typical value Ratings –100 ±20 –20 –80 –20 –20 –80 25 –55 ~ +150 –55 ~ +150 2000 2.0 Unit V V A A A A A W °C °C V g Jan.1999 PRELIMINARYNSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeact...




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