FX20ASJ-06

P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER MOSFET FX20ASJ-06 HIGH-SPEED SWITCHING USE FX20ASJ-06 OUTLINE DRAWING 1.5 ± 0.2 6.5 5.0 ± 0.2 4 Dimensions in mm 0.5 ± 0.1 5.5 ± 0.2 1.0 max 2.3 min 10 max 1.0 A 0.5 ± 0.2 0.8 0.9 max 2.3 2.3 2.3 1 2 3 3 4V DRIVE VDSS ............................................................... –60V rDS (ON) (MAX) ................................................ 97mΩ ID .................................................................... –20A Integrated Fast Recovery Diode (TYP.) ...........50ns APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 1 1 2 3 4 2 4 GATE DRAIN SOURCE DRAIN MP-3 MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage VGS = 0V VDS = 0V Conditions Ratings –60 ±20 –20 –80 –20 –20 –80 35 –55 ~ +150 –55 ~ +150 Unit V V A A A A A W °C °C g Jan.1999 Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 100µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value 0.26 P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER MOSFET FX20ASJ-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR)...