2SK3115B

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3115B SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3115B is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION PART NUMBER PACKAGE 2SK3115B-S17-AY Note Isolated TO-220 Note Pb-free (This product does not contain Pb in External electrode.) FEATURES Low gate charge QG = 21 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) Gate voltage rating : ±30 V Low on-state resistance RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A) Avalanche capability ratings ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 600 ±30 ±6.0 ±24 2.0 35 150 −55 to +150 6.0 24 V V A A W W °C °C A mJ (Isolated TO-220) Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics s...