K881

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK881 FM Tuner Applications VHF Band Amplifier Applications 2SK881 Unit: mm Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) High forward transfer admittance: |Yfs| = 9 mS (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range VGDO IG PD Tj Tstg −18 10 100 125 −55~125 V mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA SC-70 TOSHIBA 2-2E1C Weight: 0.006 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Gate leakage current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure IGSS VGS = −0.5 V, VDS = 0 V (BR) GDO IG = −10 μA IDSS (Note) VGS ...