SDM4435

S DM4435 P -C hannel E nhancement Mode MOS FE T J ul.27 2004 ver1.1 P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) Max -30V -8A 20 @ VGS = -10V 35 @ VGS = -4.5V F E AT UR E S S uper high dense cell design for low R DS(ON). R ugged and reliable. S urface Mount P ackage. DDDD 8 7 65 5 S O-8 1 1 234 S SS G ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=125 C -P ulsed b Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 25 -8 -40 -1.7 2.5 -55 to 150 Unit V V A A A W C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient a R JA 50 C /W 1 S DM4435 E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) P a ra meter S ymbol C ondition Min Typ C Max Unit OFF CHARACTERISTICS 5 Drain-S ource Breakdown Voltage BVDSS VGS =0V, ID =-250uA -30 Zero Gate Voltage Drain Current IDSS VDS =-24V, VGS =0V Gate-Body Leakage ON CHARACTERISTICS b IGSS VGS = 25V, VDS =0V V -1 uA 100 nA Gate Threshold Voltage VGS(th) VDS =VGS, ID = -250uA -1 -1.6 -3 V Drain-S ource On-S tate R esistance R DS(ON) VGS = -10V, ID =-8.0A VGS = -4.5V, ID = -5.0A 15 20 m-ohm 22 35 m-ohm On-S tate Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS c ID(ON) gFS Input Capacitance C IS S Output Capacitance COSS R everse Transfer ...