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UPD431008

NEC

1M-BIT CMOS FAST STATIC RAM

DATA SHEET MOS INTEGRATED CIRCUIT µ PD431008 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT Description The µPD431008 i...


NEC

UPD431008

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Description
DATA SHEET MOS INTEGRATED CIRCUIT µ PD431008 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT Description The µPD431008 is a high speed, low power, 1 048 576 bits (131 072 words by 8 bits) CMOS static RAM. The µPD431008 is packed in 32-pin plastic SOJ. Feature q 131 072 words by 8 bits organization q Fast access time 15, 17, 20 ns (MAX.) q Output buffers control: OE q Common I/O using three state outputs q Fully static operation: no clock or refreshing to operate q TTL compatible: all inputs and outputs q Single +5 V power supply Ordering Information Part number Package µPD431008LE-15 µPD431008LE-17 µPD431008LE-20 32-pin plastic SOJ (400 mil) Access time ns (MAX.) 15 17 20 Operating supply current mA (MAX.) 160 150 140 Standby supply current mA (MAX.) 10 Quality grade Standard Remark Operating supply current is 120 mA (MAX.) when this product is used at 50ns cycle time. Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. The information in this document is subject to change without notice. Document No. IC-3242 (O.D.No. IC-8815) Date Published July 1993 P Printed in Japan © 19923 Pin Configuration (Marking Side) 32-Pin Plastic SOJ (400 mil) A3 A2 A1 A0 CS I/O1 I/O2 VCC GND I/O3 I/O4 WE A16 A15 A14 A13 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 µ PD431008LE-15 µ PD431008LE-17 µ PD431008LE-20 32 A4 31 A5 30 A6 ...




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