STP3NB100

STP3NB100 STP3NB100FP N-CHANNEL 1000V - 5.3Ω - 3A TO-220/TO-220FP PowerMesh™ MOSFET TYPE VDSS RDS(on) ID PRELIMINARY DATA STP3NB100 1000 V <6Ω 3A STP3NB100FP 1000 V <6Ω 3A s TYPICAL RDS(on) = 5.3Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED 3 2 1 3 2 1 )DESCRIPTION t(sUsing the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- cvanced family of power MOSFETs with outstanding uperformances. The new patent pending strip layout rodcoupled with the Company’s proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, Pexceptional avalanche and dv/dt capabilities and teunrivalled gate charge and switching characteris- tics. oleAPPLICATIONS ss HIGH CURRENT, HIGH SPEED SWITCHING bs SWITH MODE POWER SUPPLIES (SMPS) Os DC-AC CONVERTERS FOR WELDING -EQUIPMENT t(s)ABSOLUTE MAXIMUM RATINGS cSymbol Parameter roduVDS PVDGR teVGS leID soID ObIDM (v) Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM Value STP3NB100 STP3NB100FP 1000 1000 ±30 3 3 (*) 1.9 1.9 (*) 12 12 Unit V V V A A A PTOT Total Dissipation at TC = 25°C 100 35 W Derating Factor 0.8 0.28 W/°C dv/dt (1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns VISO Insulation Withstand Voltage (DC) - ...