SEMICONDUCTOR
TECHNICAL DATA
KHB4D5N60P/F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe...
SEMICONDUCTOR
TECHNICAL DATA
KHB4D5N60P/F
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies.
FEATURES VDSS(Min.)= 600V, ID= 4.5A Drain-Source ON Resistance : RDS(ON)=2.5 @VGS =10V Qg(typ.) =17nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB4D5N60P KHB4D5N60F
Drain-Source Voltage
Gate-Source Voltage
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
Drain Power Dissipation
Tc=25 Derate above25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
VDSS VGSS
ID IDP EAS EAR dv/dt
PD Tj Tstg
600 30
4.5 4.5* 2.8 2.8* 18 18*
260
10.6
4.5 106 36 0.85 0.29
150 -55 150
V V
A
mJ mJ V/ns W W/
Thermal Resistance, Junction-to-Case RthJC
1.18
Thermal Resistance, Case-to-Sink
RthCS
0.5
Thermal Resistance, Junction-toAmbient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
3.47 /W - /W
62.5 /W
Q
KHB4D5N60P
A
E
I K
M D
NN
F G
B Q
L J
O C
P H
123
1. GATE 2. DRAIN 3. SOURCE
DIM MILLIMETERS A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05 D 0.8 +_ 0.1 E 3.6 +_ 0.2 F 2.8 +_ 0.1 G 3.7 H 0.5+0.1/-0.05 I 1.5 J 13.08 +_ 0.3 K 1.46 L 1.4 +_ 0.1 M 1.27 +_ 0.1 N 2.54 +_ 0.2 O 4.5 +_ 0.2 P 2.4 ...