C4704

2SC4704 Silicon NPN Epitaxial High Frequency Amplifier Feature Excellent high frequency characteristics fT = 300 MHz typ High voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ Suitable for wide band video amplifier Complementary pair of 2SA1810 TO-126 MOD Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ————————————————————– Collector to base voltage VCBO 200 V ————————————————————– Collector to emitter voltage VCEO 200 V ————————————————————– Emitter to base voltage VEBO 4 V ————————————————————– Collector current IC 0.2 A ————————————————————– Collector peak current iC(peak) 0.5 A ————————————————————– Collector power dissipation PC 1.25 W —————— PC*1 10 ————————————————————– Junction temperature Tj 150 °C ————————————————————– Storage temperature Tstg –55 to °C +150 ————————————————————– Note: 1. Value at TC = 25°C. 123 1. Emitter 2. Collector 3. Base Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test condition ——————————————————————————————————————————— Collector to base breakdown voltage V(BR)CBO 200 — — V IC = 10 µA, IE = 0 ——————————————————————————————————————————— Collector to emitter breakdown voltage V(BR)CEO 200 — — V IC = 1 mA, RBE = ∞ ——————————————————————————————————————————— Emitter to base breakdown voltage V(BR)EBO 4 ——V IE = 10 µA, IC = 0 ——————————————————————————————————————————— Collector cutoff current ICBO — — 10 µA VCB = 160 V, IE = 0 ———...