KIA28N50H

KIA 28A，500V N-CHANNEL MOSFET SEMICONDUCTORS 15507595280 QQ 2880195519 1.Description 28N50H This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. . 2. Features  RDS(on)=0.17Ω @ VGS=10V  Low gate charge ( typical 102nC)  Fast switching capability  Avalanche energy specified  Improved dv/dt capability 3. Pin configuration Pin 1 2 3 1 of 5 Function Gate Drain Source Rev 1.0 JAN 2014 KIA SEMICONDUCTORS 28A，500V N-CHANNEL MOSFET 28N50H 4. Absolute maximum ratings Parameter (TC= 25 ºC , unless otherwise specified) Symbol Ratings Units Drain-source voltage Gate-source voltage VDSS VGSS 500 +30 V V Drain current continuous TC=25ºC TC=100ºC Drain current pulsed (note1) Avalanche energy Repetitive (note1) Single pulse (note2) Peak diode recovery dv/dt (note 3) ID IDP EAR EAS dv/dt 28 16.8 112 43 1960 4.5 A A A mJ mJ V/ns Total power dissipation TC=25ºC derate above 25ºC PD 479 W 3.83 W/ºC Junction temperature TJ Storage temperature TSTG *Drain current limited by maximum junction temperature. +150 -55~+150 ºC ºC 5. Thermal characteristics Parameter Thermal resistance,junction-ambient ...