J511

2SJ511 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ511 Chopper Regulator, DC−DC Converter and Motor Drive Applications l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.32 Ω (typ.) l High forward transfer admittance : |Yfs| = 1.4 S (typ.) l Low leakage current : IDSS = −100 µA (max) (VDS = −30 V) l Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation Drain power dissipation (Note 2) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 4) Channel temperature Storage temperature range Thermal Characteristics Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −2 −6 0.5 1.5 55 −2 0.05 150 −55~150 Unit V V V A A W W mJ A mJ °C °C JEDEC ― JEITA ― TOSHIBA 2−5K1B Weight: 0.05 g (typ.) Marking Characteristics Symbol Max Unit Thermal resistance, channel to ambient Rth (ch−a) 250 °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) Note 3: VDD = −25 V, Tch = 25°C (initial), L = 10 mH, RG = 25 Ω, IAR = −2 A Note 4: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Plea...