Document
2SJ508
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
2SJ508
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
l 4 V gate drive
l Low drain−source ON resistance
: RDS (ON) = 1.35 Ω (typ.)
l High forward transfer admittance : |Yfs| = 0.7 S (typ.)
l Low leakage current : IDSS = −100 µA (VDS = −100 V)
l Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation
Drain power dissipation
(Note 2)
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
Symbol
VDSS VDGR VGSS
ID IDP PD PD
EAS
IAR EAR Tch Tstg
Rating
−100 −100 ±20
−1 −3 0.5 1.5
136.5
−1 0.05 150 −55~150
Unit
V V V A A W W
mJ
A mJ °C °C
JEDEC
―
JEITA
―
TOSHIBA
2−5K1B
Weight: 0.05 g (typ.)
Thermal Characteristics
Characteristics
Symbol Max Unit
Marking
Thermal resistance, channel to ambient
Rth (ch−a)
250 °C / W
ZE
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: VDD = −50 V, Tch = 25°C (initial), L = 168 mH, RG = 25 Ω, IAR = −1 A Note 4: Repetitive rating: Pulse width limited by maximum channel temperature
(The two digits represent
This transistor is an electrostatic sensitive device. Please handle with caution.
the part number.)
1 2002-06-26
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance
Rise time
Symbol
Test Condition
IGSS IDSS
VGS = ±16 V, VDS = 0 V VDS = −100 V, VGS = 0 V
V (BR) DSS ID = −10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs| Ciss Crss Coss
VDS = −10 V, ID = −1 mA VGS = −4 V, ID = −0.5 A VGS = −10 V, ID = −0.5 A VDS = −10 V, ID = −0.5 A
VDS = −10 V, VGS = 0 V, f = 1 MHz
tr
Switching time
Turn−on time Fall time
ton tf
Turn−off time
toff
Total gate charge (Gate−source plus gate−drain)
Qg
VDD ≈ −80 V, VGS = −10 V,
Gate−source charge
Qgs ID = −1 A
Gate−drain (“miller”) charge
Qgd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current (Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP VDSF
trr Qrr
Test Condition
—
— IDR = −1 A, VGS = 0 V IDR = −1 A, VGS = 0 V dIDR / dt = 50 A / µs
2SJ508
Min
— —
−100
−0.8 — — 0.3 — — —
Typ.
— —
—
— 1.68 1.34 0.7 135 22 48
Max
±10 −100
—
−2.0 2.5 1.9 — — — —
Unit µA µA V V Ω S
pF
— 20 —
— 32 — ns
— 25 —
— 130 —
— 6.3 — — 4.1 — — 2.2 —
nC
Min Typ. Max Unit
— — −1 A
— — −3 A
— — 1.5 V
— 90 — ns
— 180 —
nC
2 2002-06-26
2SJ508
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the th.