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J508 Dataheets PDF



Part Number J508
Manufacturers Toshiba
Logo Toshiba
Description 2SJ508
Datasheet J508 DatasheetJ508 Datasheet (PDF)

2SJ508 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ508 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) l High forward transfer admittance : |Yfs| = 0.7 S (typ.) l Low leakage current : IDSS = −100 µA (VDS = −100 V) l Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate .

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2SJ508 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ508 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) l High forward transfer admittance : |Yfs| = 0.7 S (typ.) l Low leakage current : IDSS = −100 µA (VDS = −100 V) l Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation Drain power dissipation (Note 2) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −100 −100 ±20 −1 −3 0.5 1.5 136.5 −1 0.05 150 −55~150 Unit V V V A A W W mJ A mJ °C °C JEDEC ― JEITA ― TOSHIBA 2−5K1B Weight: 0.05 g (typ.) Thermal Characteristics Characteristics Symbol Max Unit Marking Thermal resistance, channel to ambient Rth (ch−a) 250 °C / W ZE Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) Note 3: VDD = −50 V, Tch = 25°C (initial), L = 168 mH, RG = 25 Ω, IAR = −1 A Note 4: Repetitive rating: Pulse width limited by maximum channel temperature (The two digits represent This transistor is an electrostatic sensitive device. Please handle with caution. the part number.) 1 2002-06-26 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol Test Condition IGSS IDSS VGS = ±16 V, VDS = 0 V VDS = −100 V, VGS = 0 V V (BR) DSS ID = −10 mA, VGS = 0 V Vth RDS (ON) |Yfs| Ciss Crss Coss VDS = −10 V, ID = −1 mA VGS = −4 V, ID = −0.5 A VGS = −10 V, ID = −0.5 A VDS = −10 V, ID = −0.5 A VDS = −10 V, VGS = 0 V, f = 1 MHz tr Switching time Turn−on time Fall time ton tf Turn−off time toff Total gate charge (Gate−source plus gate−drain) Qg VDD ≈ −80 V, VGS = −10 V, Gate−source charge Qgs ID = −1 A Gate−drain (“miller”) charge Qgd Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition — — IDR = −1 A, VGS = 0 V IDR = −1 A, VGS = 0 V dIDR / dt = 50 A / µs 2SJ508 Min — — −100 −0.8 — — 0.3 — — — Typ. — — — — 1.68 1.34 0.7 135 22 48 Max ±10 −100 — −2.0 2.5 1.9 — — — — Unit µA µA V V Ω S pF — 20 — — 32 — ns — 25 — — 130 — — 6.3 — — 4.1 — — 2.2 — nC Min Typ. Max Unit — — −1 A — — −3 A — — 1.5 V — 90 — ns — 180 — nC 2 2002-06-26 2SJ508 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the th.


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