2SA795

isc Silicon PNP Power Transistor DESCRIPTION ·Large Collector Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1565 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA795 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A ; IB= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= -1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -300mA; IB= -30mA VBE(sat) Base-Emitter Saturation Voltage IC= -300mA; IB= -30mA ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -150mA ; VCE= -10V hFE-2 DC Current Gain IC=-500mA ; VCE= -5V fT Current-Gain—Bandwidth Product IC= -50mA ; VCE= -10V COB Output Capacitance IE=0 ; VCB= -100V,ftest= 1MHz  hFE-1 ...